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Optimum Carrier Distribution of the IGBT
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| Author(s) |
Sheng K., Udrea F., Amaratunga G.A.J. |
| Abstract |
In this paper, optimum base carrier istributions of the IGBT for best trade-off between the on-state voltage and turn-off loss are calculated by an analytical model without using a numerical simulator for the first time. It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode end. The results, which are supported by 2-D numerical simulations and experiments, provide an interesting guideline for optimizing the IGBT. Practical considerations of the predicted optimum design are discussed. |
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| Filename: | EPE-PEMC2000 - 241 - Sheng.pdf |
| Filesize: | 325 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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