| |
A Pseudo-MOS/SOI Transistor with Two Inversion Channels
| [View]
[Download]
|
| Author(s) |
Ravariu C., Ravariu F.*, Rusu A., Dobrescu D., Dobrescu L. |
| Abstract |
The Pseudo-MOS transistor (y-MOSFET) can be achieved on all SOI structure, without any lithographic technique. The aim of this paper is to highlight an analytical model of an y-MOSFET with two inversion channels. A possible application is in the domain of the multi-layer SOI devices and power-SOI devices when both inversion channels are exploited. The model was compared with PISCES simulations. |
| Download |
| Filename: | EPE-PEMC2000 - 320 - Ravariu.pdf |
| Filesize: | 528.2 KB |
|
| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
| |
 |