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Clustered Insulated Gate Bipolar Transistor (CIGBT) - a New Power Semiconductor Device
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| Author(s) |
Sweet M., Spulber O., De Souza M.M., Chandra Bose S., Sankara Narayanan E.M. |
| Abstract |
For the first time, we demonstrate a new MOS controlled power device, called the Clustered IGBT, with superior on-state and switching characteristics than that of an IGBT. The additional n and p wells provide a unique self-clamping feature that protects the cathode from any surge current or voltage and improves its safe operating area. |
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| Filename: | EPE-PEMC2000 - 250 - Sweet.pdf |
| Filesize: | 619.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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