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PT and NPT IGBTs up to 1.2kV: Which is Optimum?
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| Author(s) |
Sheng K., Udrea F., Huang S., Trajkovic T., Amaratunga G.A.J., Waind P.* |
| Abstract |
A performance and reliability comparison of punch-through (PT) and non-punch-through (NPT) IGBTs by experimental analysis supported by numerical simulation is presented in this paper for both 600V and 1.2kV rated devices. Thermal effects were given special considerations during investigation of device reliability under high frequency operation and short circuit conditions. |
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| Filename: | EPE-PEMC2000 - 240 - Sheng.pdf |
| Filesize: | 256.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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