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An Analysis of Trench Corner Structure Using Hydrogen Annealing for Highly Reliable Trench DMOSFETs
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| Author(s) |
Kim S.G., Kim J., Nam K.S., Lee S.Y.*, Koo J.G., Cho K.I. |
| Abstract |
A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current. |
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| Filename: | EPE-PEMC2000 - 017 - Kim.pdf |
| Filesize: | 1.477 MB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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