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New Diodes With Pressure Contact for Hard-Switched High Power Converters
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| Author(s) |
R. Barthelmeß; M. Beuermann; N. Winter |
| Abstract |
New power semiconductor switches, like IGBT and GCT (gate commutated thyristor), offer excellent
switching performance and make snubberless converter design possible. New fast diodes in standard
ceramic press-pack housings have been developed for these new demands. 4500V diodes in 100mm
standard press-pack housings show excellent switching behavior at high di/dt and a wide range of the
junction temperature up to 140°C. Different diode designs are investigated by experiments.
The press-pack concept guarantees redundancy in series connection, well known power cycling
capability and high case rupture currents. |
| Download |
| Filename: | EPE1999 - PP00396 - Beuermann.pdf |
| Filesize: | 192.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-25 by System |
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