| |
A New IGBT Chip Design for 2.5kV Power Pack IGBT with High Withstand Capability
| [View]
[Download]
|
| Author(s) |
S. Yasukazu; Koh-Yoshikawa; Takeharu-Koga; Takeshi-Fujii; Yoshikazu-Takahashi |
| Abstract |
A new concept for achieving much higher electrical withstand capabilities on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600A (@ peak collector voltage = 2500 V. Tj=125°C) and the short-circuit capability of over 50usec (@Vcc= 1600V, Tj=125°C) are successfuly obtained by newly designed Power Pack IGBT. In this paper, the simulation results based upon the new IGBT chip design concept are mentioned with comparison to our experimental data. |
| Download |
| Filename: | EPE1999 - PP00721 - Yasukazu.pdf |
| Filesize: | 1.326 MB |
|
| Type |
Members Only |
| Date |
Last modified 2004-03-25 by System |
| |
 |