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Causes of Parasitic Current Oscillation in IGBT Modules During Turn-Off
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| Author(s) |
P. R. Palmer; J. C. Joyce |
| Abstract |
Parallel IGBT chips in modules may exhibit undesirable characteristics at turnoff. Gate resistors, used to stabilise the operation of paralleled IGBT chips, decouple their operation. For good transient current sharing during turn-off, their operation needs to be well coupled. This paper is concerned with the optimal design of gate resistors for IGBT modules. Experimental results are for an ideally matched chip pair. Theoretical results show that a minimum value of gate resistance is needed for stability. |
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| Filename: | EPE1999 - PP00376 - Joyce.pdf |
| Filesize: | 132.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-29 by System |
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