EPE Association: EPE 2001 - Topic 01c: Hybrid Power Integration

EPE 2001 - Topic 01c: Hybrid Power Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01c: Hybrid Power Integration

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   A Gate Control Circuit Assisting IGBT in Parallel connections
By G. Belverde; M. Melito; S. Musumeci; A. Raciti [View]
[Download]

Abstract: In the field of power equipment, the parallel connection of insulated gate devices, such as IGBTs or Power MOSFETs, is pursued in order to obtain power switches with higher current carrying capability. The control of the balanced sharing of the currents during the parallel operations is a key issue worth being considered. The proposed technique allows obtaining safe commutations without thermal stresses on the single device by exploiting the actions of a simple and effective control circuit, which intervenes on the gate side of the power devices. The method does not show limitations on the number of paralleled devices, which can be managed. Several experimental tests have been carried out in order to demonstrate the validity and correctness of the proposed approach.

   Analysis of IGBT Behavior in ZVS Based on Measurements and Simulation
By M. Cotorogea; A. Claudio; J. Aguayo [View]
[Download]

Abstract: Switching loss reduction through soft commutation techniques such as zero-current- (ZCS) and zerovoltage switching (ZVS) is widely applied in converter designs. This work presents the analysis of IGBT behavior in ZVS commutation using experimental and simulation results. The study considers the variation of important test parameters such as the gate voltage, the junction temperature and the current gradient.

   IGBT-Module Driver Optimised for Electric Vehicle Applications
By X. Jordà; P. Godignon; J. Millán; M. Vellvehí; N. Schofield; D. A. Stone [View]
[Download]

Abstract: A gate drive circuit for an IGBT inverter power module oriented to electric vehicle traction applications, has been designed, implemented and tested. The driver board controls two 600V-400A IGBTs forming one dedicated leg of a three phase traction machine inverter, and in the final version is directly bonded onto a custom designed water-cooled power module. Its main characteristics are a full bridge output stage, short circuit protection with soft turn-off sequence, over temperature, transient over and under voltage, and shoot-through protections. These protection capabilities are prerequisites for silicon drive stages in traction applications, particularly where the DC supply has dynamic load variations in the order of 180-320V and 0-400A peak. The full bridge output stage allows positive gate-to-emitter voltage during the IGBT on-state and negative voltage during the off state using a single isolated voltage power supply. The decoupling capacitor value associated with the output stage and the voltage power supply dimensioning, is also analysed. The VCE monitoring circuit detects a short circuit condition and automatically turns-off the IGBT by reducing the gate voltage from the positive gate voltage to zero and then from zero to the negative gate voltage. This “soft” turn-off feature can be very easily implemented using the full bridge output stage topology, and its effect on the collector-to-emitter peak voltage has been studied during the recovery of short circuit processes. The dependence and effects of short circuit protection on the most critical components of the circuit are also experimentally shown. The rest of the protection circuits are also discussed. They have been designed in order to obtain a very simple and reliable system. The driver has been successfully tested using an H-bridge converter with 300V applied voltage, sinusoidal output currents up to 120Arms into an inductive load, at a maximum PWM switching frequency of 20kHz.

   Improved power chip electrical connection
By B. Boursat; F. Breit; M. Mermet-Guyennet [View]
[Download]

Abstract: A new chip connection technique is developed to increase hybrid power module reliability. It is well known that wire bonding is an important failure cause. This paper describes how to realise the chip connections using solder balls, called bumps. And this new technique gives a large flexibility for new packaging design.

   Jet impingement cooling for power IGBT chip
By E. Dutarde; M. Mermet-Guyennet [View]
[Download]

Abstract: A jet impingement cooling is studied in order to cool down power IGBT chip. First, the heat transfer is calculated via empirical correlation, then the set-up is simulated on a CFD code in order to take into account specific geometry of power devices. Finally, a prototype is manufactured to check the accuracy of calculation method.

   New concept of integrated inverter and its experimentation in service
By D. Fellmann [View]
[Download]

Abstract: A one-year experimentation in revenue service of a new concept of inverter is presented. This experimentation has been performed on the underground line N°1 of the RATP between “Château de Vincennes” and “La Défense”, one of the most frequented lines in Paris. For this experimentation, an asynchronous traction drive has been modified using a two level voltage inverter based on new concepts. The main principles supporting these new concepts will be described. They have led to three types of innovation, which have been applied during the design: 1) Thermal integration: Direct water cooling on IGBT base plate 2) Electrical integration: Direct connection IGBTs / capacitors 3) Functional integration: inverter & cooling system in one removable sub-assembly. A data acquisition system have allowed us to follow this experimentation and provide data on the main physical parameters (water temperature, air speed,…). An analysis of these data will be proposed.

   Performance Evaluation of High-Voltage MDmesh MOSFETs in PFC
By G. Belverde; M. Melito; S. Musumeci; A. Raciti; M. Saggio [View]
[Download]

Abstract: A new high voltage MOSFET structure is presented which results in static as well as dynamic performances far ahead of conventional power MOSFET devices. A detailed discussion of the switching transients and gate charge is reported. The impact of the particular features of the device is analyzed and quantified in a case study regarding a dc-dc boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific circuit are discussed.

   Utilization of Diamond Substrates for Power Electronics Packaging
By A.B. Lostetter; K. J. Olejniczak; A. P. Malshe; W. D. Brown; A. Elshabini [View]
[Download]

Abstract: Diamond and diamond-like carbons (DLCs) possess the unique combination of excellent thermal conduction, electrical insulation, and mechanical properties that make them candidate materials of choice for power packaging applications (specifically those requiring high-performance thermal management solutions). This paper discusses the advantages of utilizing diamond and DLC substrate technology in power packaging applications, including: DLC processing issues, the results of experimental testing of preliminary diamond power packages (in comparison with analytical and 3-D FLOTHERM computer simulations), and the analysis of current prototype diamond power package designs and models.

   VDMOS IPM with novel overtemperature protection
By Z. Lisik; Z. Szczepaniak; J. Szmidt [View]
[Download]

Abstract: A new approach to temperature monitoring of VDMOS transistors in intelligent power modules (IPM), which use the channel resistance as the temperature sensitive parameter is presented. The usefulness of the proposed solution has been checked in a IPM mode. The overtemperature monitoring circuit designed for the module has been examined.

EPE 2001 - Topic 01c: Hybrid Power Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01c: Hybrid Power Integration
	[return to parent folder]

	A Gate Control Circuit Assisting IGBT in Parallel connections By G. Belverde; M. Melito; S. Musumeci; A. Raciti	[View] [Download]
Abstract: In the field of power equipment, the parallel connection of insulated gate devices, such as IGBTs or Power MOSFETs, is pursued in order to obtain power switches with higher current carrying capability. The control of the balanced sharing of the currents during the parallel operations is a key issue worth being considered. The proposed technique allows obtaining safe commutations without thermal stresses on the single device by exploiting the actions of a simple and effective control circuit, which intervenes on the gate side of the power devices. The method does not show limitations on the number of paralleled devices, which can be managed. Several experimental tests have been carried out in order to demonstrate the validity and correctness of the proposed approach.

	Analysis of IGBT Behavior in ZVS Based on Measurements and Simulation By M. Cotorogea; A. Claudio; J. Aguayo	[View] [Download]
Abstract: Switching loss reduction through soft commutation techniques such as zero-current- (ZCS) and zerovoltage switching (ZVS) is widely applied in converter designs. This work presents the analysis of IGBT behavior in ZVS commutation using experimental and simulation results. The study considers the variation of important test parameters such as the gate voltage, the junction temperature and the current gradient.

	IGBT-Module Driver Optimised for Electric Vehicle Applications By X. Jordà; P. Godignon; J. Millán; M. Vellvehí; N. Schofield; D. A. Stone	[View] [Download]
Abstract: A gate drive circuit for an IGBT inverter power module oriented to electric vehicle traction applications, has been designed, implemented and tested. The driver board controls two 600V-400A IGBTs forming one dedicated leg of a three phase traction machine inverter, and in the final version is directly bonded onto a custom designed water-cooled power module. Its main characteristics are a full bridge output stage, short circuit protection with soft turn-off sequence, over temperature, transient over and under voltage, and shoot-through protections. These protection capabilities are prerequisites for silicon drive stages in traction applications, particularly where the DC supply has dynamic load variations in the order of 180-320V and 0-400A peak. The full bridge output stage allows positive gate-to-emitter voltage during the IGBT on-state and negative voltage during the off state using a single isolated voltage power supply. The decoupling capacitor value associated with the output stage and the voltage power supply dimensioning, is also analysed. The VCE monitoring circuit detects a short circuit condition and automatically turns-off the IGBT by reducing the gate voltage from the positive gate voltage to zero and then from zero to the negative gate voltage. This “soft” turn-off feature can be very easily implemented using the full bridge output stage topology, and its effect on the collector-to-emitter peak voltage has been studied during the recovery of short circuit processes. The dependence and effects of short circuit protection on the most critical components of the circuit are also experimentally shown. The rest of the protection circuits are also discussed. They have been designed in order to obtain a very simple and reliable system. The driver has been successfully tested using an H-bridge converter with 300V applied voltage, sinusoidal output currents up to 120Arms into an inductive load, at a maximum PWM switching frequency of 20kHz.

	Improved power chip electrical connection By B. Boursat; F. Breit; M. Mermet-Guyennet	[View] [Download]
Abstract: A new chip connection technique is developed to increase hybrid power module reliability. It is well known that wire bonding is an important failure cause. This paper describes how to realise the chip connections using solder balls, called bumps. And this new technique gives a large flexibility for new packaging design.

	Jet impingement cooling for power IGBT chip By E. Dutarde; M. Mermet-Guyennet	[View] [Download]
Abstract: A jet impingement cooling is studied in order to cool down power IGBT chip. First, the heat transfer is calculated via empirical correlation, then the set-up is simulated on a CFD code in order to take into account specific geometry of power devices. Finally, a prototype is manufactured to check the accuracy of calculation method.

	New concept of integrated inverter and its experimentation in service By D. Fellmann	[View] [Download]
Abstract: A one-year experimentation in revenue service of a new concept of inverter is presented. This experimentation has been performed on the underground line N°1 of the RATP between “Château de Vincennes” and “La Défense”, one of the most frequented lines in Paris. For this experimentation, an asynchronous traction drive has been modified using a two level voltage inverter based on new concepts. The main principles supporting these new concepts will be described. They have led to three types of innovation, which have been applied during the design: 1) Thermal integration: Direct water cooling on IGBT base plate 2) Electrical integration: Direct connection IGBTs / capacitors 3) Functional integration: inverter & cooling system in one removable sub-assembly. A data acquisition system have allowed us to follow this experimentation and provide data on the main physical parameters (water temperature, air speed,…). An analysis of these data will be proposed.

	Performance Evaluation of High-Voltage MDmesh MOSFETs in PFC By G. Belverde; M. Melito; S. Musumeci; A. Raciti; M. Saggio	[View] [Download]
Abstract: A new high voltage MOSFET structure is presented which results in static as well as dynamic performances far ahead of conventional power MOSFET devices. A detailed discussion of the switching transients and gate charge is reported. The impact of the particular features of the device is analyzed and quantified in a case study regarding a dc-dc boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific circuit are discussed.

	Utilization of Diamond Substrates for Power Electronics Packaging By A.B. Lostetter; K. J. Olejniczak; A. P. Malshe; W. D. Brown; A. Elshabini	[View] [Download]
Abstract: Diamond and diamond-like carbons (DLCs) possess the unique combination of excellent thermal conduction, electrical insulation, and mechanical properties that make them candidate materials of choice for power packaging applications (specifically those requiring high-performance thermal management solutions). This paper discusses the advantages of utilizing diamond and DLC substrate technology in power packaging applications, including: DLC processing issues, the results of experimental testing of preliminary diamond power packages (in comparison with analytical and 3-D FLOTHERM computer simulations), and the analysis of current prototype diamond power package designs and models.

	VDMOS IPM with novel overtemperature protection By Z. Lisik; Z. Szczepaniak; J. Szmidt	[View] [Download]
Abstract: A new approach to temperature monitoring of VDMOS transistors in intelligent power modules (IPM), which use the channel resistance as the temperature sensitive parameter is presented. The usefulness of the proposed solution has been checked in a IPM mode. The overtemperature monitoring circuit designed for the module has been examined.