Abstract |
In the field of power equipment, the parallel connection of insulated gate devices, such as IGBTs or
Power MOSFETs, is pursued in order to obtain power switches with higher current carrying capability.
The control of the balanced sharing of the currents during the parallel operations is a key issue worth
being considered. The proposed technique allows obtaining safe commutations without thermal
stresses on the single device by exploiting the actions of a simple and effective control circuit, which
intervenes on the gate side of the power devices. The method does not show limitations on the number
of paralleled devices, which can be managed. Several experimental tests have been carried out in
order to demonstrate the validity and correctness of the proposed approach. |