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VDMOS IPM with novel overtemperature protection
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| Author(s) |
Z. Lisik; Z. Szczepaniak; J. Szmidt |
| Abstract |
A new approach to temperature monitoring of VDMOS transistors in intelligent power modules
(IPM), which use the channel resistance as the temperature sensitive parameter is presented. The
usefulness of the proposed solution has been checked in a IPM mode. The overtemperature
monitoring circuit designed for the module has been examined. |
| Download |
| Filename: | EPE2001 - PP00442 - Lisik.pdf |
| Filesize: | 51.56 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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