EPE Association: 09 - Madep - M2.2

09 - Madep - M2.2 - NEW DEVICES 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 09 - Madep - M2.2 - NEW DEVICES 01

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   THE IGBT - A SEMICONDUCTOR SWITCH FOR DRIVE SYSTEMS
By L. Lorenz; M. Feldvoss; H. Amann [View]
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Abstract: Further development of the IGBT as an efficient power semiconductor switch for electrical drive systems using intermediate circuit voltages of up to 1600 V is-described below. In particular, the dynamic and statie electrical behavior, maximum rating ranges and ruggedness as well as the short-circuit behavior of these new high blocking-capability IGBTs are discussed in detail. Moreover, a concept of a self-protected power semiconductor switch is demonstrated and the switch requirements for full protection described.

   IGBT TURN-OFF LOSSES - IN HARD SWITCHING AND WITH A CAPACITIVE SNUBBER
By Astrid Petterteig; Terje Rogne [View]
[Download]

Abstract: This paper presents measured turn-off losses in different high voltage IGBTs, 1000V and 1200V. The current rating of the tested IGBTs are 50A-100A. Hard switching and switching with a capacitive snubber are analyzed, both at 25°C and at 125°C. The influence of variations in gate resistance is covered. In all the measured IGBTs, the turn-off losses are reduced by including a snubber capacitor. But the amount of loss reduction is shown to be strongly dependent upon the type of IGBT. In IGBTs heavily doped with life time killers, the turn-off losses are strongly temperature dependent and increase rapidly wlth increasing turn-off current. A considerable turn-off loss reduction is gained by adding a snubber capacitor. IGBTs without life time killers, show a low temperature dependence, and by adding a capacitor across the transistor, the tail current and thus the turn-off losses are only slightly reduced.

   Cornparison of Stresses in IGBT Devices using the Quasi-Resonant Current Mode
By K. Heumann; Ch. Keller; R. Sommer [View]
[Download]

Abstract: IGBT devices are becoming more important in quasi-resonant applications. For the power semiconductor devices the switching and on-state stress is quite different from that in normal PWM inverters. To investigate turn-off power semiconductor devices in zero current switch halfwave mode and fullwave mode operation a new test circuit was proposed. In both operation modes with new generation IGBT devices switching frequency has been increased up to 200 kHz. For each device the dissipated power is separated into switching loss and conduction loss, a frequency dependent and a frequency independent part. Measured waveforms and measurement results with these devices are shown.

   ANALYSIS OF THE VERTICAL INSULATED BASE TRANSISTOR
By P. Godignon; J. Fernández; S. Hidalgo; F. Berta; J. Rebollo; J. Millán [View]
[Download]

Abstract: A vertical MOS-bipolar power device, the IBT, is presented in this paper. This free latch-up structure has been analyzed by means of two-dimensional numerical simulations and compared with the VDMOS and the IGBT. It is shown that the vertical IBT exhibits higher current capability than the VDMOS and comparable to the IGBT for low-medium voltage applications. A modified IBT structure is also presented to improve its switching behaviour, and compared to the basic IBT structure.

   SWITCHING CHARACTERISTICS OF FIELD CONTROLLED THYRISTORS
By G. Venkataramanan; A. Mertens; H.-Ch. Skudelny; H. Grüning [View]
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Abstract: The Field Controlled Thyristor (FCTh) has been recently introduced as an alternative switching device for potential applications at high power levels. Snubberless switching of clamped inductive loads at high speeds has been demonstrated previously. This paper is aimed at a detailed and independent experimental evaluation of the switching characteristics of a 10 A 2000 V FCTh under hard and soft switching operation conditions. Operating principles of the device are reviewed in brief, highlighting the drive requirements. Results of experimental tests include on-state and switching losses as well as switching times under hard switching and an overview of the device characteristics under quasi-resonant zero current and zero voltage switching.

   DESIGN AND CHARACTERIZATION OF P-CHANNEL VDMOS-LIGBT TRANSISTORS
By T. Paul Chow; B. J. Baliga; S. Al-Mayarati; M. S. Adler [View]
[Download]

Abstract: P-channel, VDMOS-LIGBT Transistors of 300 and 500 V ratings, were designed, fabricated and characterized. The statie and dynamic performance of these transistors have been determined. The dynamic switching processes (turn-on and turn-off) have been analyzed with constituent current components. Latching has also been observed in these devices.

09 - Madep - M2.2 - NEW DEVICES 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 09 - Madep - M2.2 - NEW DEVICES 01
	[return to parent folder]

	THE IGBT - A SEMICONDUCTOR SWITCH FOR DRIVE SYSTEMS By L. Lorenz; M. Feldvoss; H. Amann	[View] [Download]
Abstract: Further development of the IGBT as an efficient power semiconductor switch for electrical drive systems using intermediate circuit voltages of up to 1600 V is-described below. In particular, the dynamic and statie electrical behavior, maximum rating ranges and ruggedness as well as the short-circuit behavior of these new high blocking-capability IGBTs are discussed in detail. Moreover, a concept of a self-protected power semiconductor switch is demonstrated and the switch requirements for full protection described.

	IGBT TURN-OFF LOSSES - IN HARD SWITCHING AND WITH A CAPACITIVE SNUBBER By Astrid Petterteig; Terje Rogne	[View] [Download]
Abstract: This paper presents measured turn-off losses in different high voltage IGBTs, 1000V and 1200V. The current rating of the tested IGBTs are 50A-100A. Hard switching and switching with a capacitive snubber are analyzed, both at 25°C and at 125°C. The influence of variations in gate resistance is covered. In all the measured IGBTs, the turn-off losses are reduced by including a snubber capacitor. But the amount of loss reduction is shown to be strongly dependent upon the type of IGBT. In IGBTs heavily doped with life time killers, the turn-off losses are strongly temperature dependent and increase rapidly wlth increasing turn-off current. A considerable turn-off loss reduction is gained by adding a snubber capacitor. IGBTs without life time killers, show a low temperature dependence, and by adding a capacitor across the transistor, the tail current and thus the turn-off losses are only slightly reduced.

	Cornparison of Stresses in IGBT Devices using the Quasi-Resonant Current Mode By K. Heumann; Ch. Keller; R. Sommer	[View] [Download]
Abstract: IGBT devices are becoming more important in quasi-resonant applications. For the power semiconductor devices the switching and on-state stress is quite different from that in normal PWM inverters. To investigate turn-off power semiconductor devices in zero current switch halfwave mode and fullwave mode operation a new test circuit was proposed. In both operation modes with new generation IGBT devices switching frequency has been increased up to 200 kHz. For each device the dissipated power is separated into switching loss and conduction loss, a frequency dependent and a frequency independent part. Measured waveforms and measurement results with these devices are shown.

	ANALYSIS OF THE VERTICAL INSULATED BASE TRANSISTOR By P. Godignon; J. Fernández; S. Hidalgo; F. Berta; J. Rebollo; J. Millán	[View] [Download]
Abstract: A vertical MOS-bipolar power device, the IBT, is presented in this paper. This free latch-up structure has been analyzed by means of two-dimensional numerical simulations and compared with the VDMOS and the IGBT. It is shown that the vertical IBT exhibits higher current capability than the VDMOS and comparable to the IGBT for low-medium voltage applications. A modified IBT structure is also presented to improve its switching behaviour, and compared to the basic IBT structure.

	SWITCHING CHARACTERISTICS OF FIELD CONTROLLED THYRISTORS By G. Venkataramanan; A. Mertens; H.-Ch. Skudelny; H. Grüning	[View] [Download]
Abstract: The Field Controlled Thyristor (FCTh) has been recently introduced as an alternative switching device for potential applications at high power levels. Snubberless switching of clamped inductive loads at high speeds has been demonstrated previously. This paper is aimed at a detailed and independent experimental evaluation of the switching characteristics of a 10 A 2000 V FCTh under hard and soft switching operation conditions. Operating principles of the device are reviewed in brief, highlighting the drive requirements. Results of experimental tests include on-state and switching losses as well as switching times under hard switching and an overview of the device characteristics under quasi-resonant zero current and zero voltage switching.

	DESIGN AND CHARACTERIZATION OF P-CHANNEL VDMOS-LIGBT TRANSISTORS By T. Paul Chow; B. J. Baliga; S. Al-Mayarati; M. S. Adler	[View] [Download]
Abstract: P-channel, VDMOS-LIGBT Transistors of 300 and 500 V ratings, were designed, fabricated and characterized. The statie and dynamic performance of these transistors have been determined. The dynamic switching processes (turn-on and turn-off) have been analyzed with constituent current components. Latching has also been observed in these devices.