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THE IGBT - A SEMICONDUCTOR SWITCH FOR DRIVE SYSTEMS
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| Author(s) |
L. Lorenz; M. Feldvoss; H. Amann |
| Abstract |
Further development of the IGBT as an efficient power semiconductor switch for electrical drive systems using intermediate circuit voltages of up to 1600 V is-described below. In particular, the dynamic and statie electrical behavior, maximum rating ranges and ruggedness as well as the short-circuit behavior of these new high blocking-capability IGBTs are discussed in detail. Moreover, a concept of a self-protected power semiconductor switch is demonstrated and the switch requirements for full protection described. |
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| Filename: | Unnamed file |
| Filesize: | 3.289 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-06-24 by System |
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