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   DESIGN AND CHARACTERIZATION OF P-CHANNEL VDMOS-LIGBT TRANSISTORS   [View] 
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 Author(s)   T. Paul Chow; B. J. Baliga; S. Al-Mayarati; M. S. Adler 
 Abstract   P-channel, VDMOS-LIGBT Transistors of 300 and 500 V ratings, were designed, fabricated and characterized. The statie and dynamic performance of these transistors have been determined. The dynamic switching processes (turn-on and turn-off) have been analyzed with constituent current components. Latching has also been observed in these devices. 
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Filename:Unnamed file
Filesize:1.507 MB
 Type   Members Only 
 Date   Last modified 2019-07-16 by System