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DESIGN AND CHARACTERIZATION OF P-CHANNEL VDMOS-LIGBT TRANSISTORS
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Author(s) |
T. Paul Chow; B. J. Baliga; S. Al-Mayarati; M. S. Adler |
Abstract |
P-channel, VDMOS-LIGBT Transistors of 300 and 500 V ratings, were designed, fabricated and characterized. The statie and dynamic performance of these transistors have been determined. The dynamic switching processes (turn-on and turn-off) have been analyzed with constituent current components. Latching has also been observed in these devices. |
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Filename: | Unnamed file |
Filesize: | 1.507 MB |
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Type |
Members Only |
Date |
Last modified 2019-07-16 by System |
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