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Cornparison of Stresses in IGBT Devices using the Quasi-Resonant Current Mode
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| Author(s) |
K. Heumann; Ch. Keller; R. Sommer |
| Abstract |
IGBT devices are becoming more important in quasi-resonant applications. For the power semiconductor devices the switching and on-state stress is quite different from that in normal PWM inverters. To investigate turn-off power semiconductor devices in zero current switch halfwave mode and fullwave mode operation a new test circuit was proposed. In both operation modes with new generation IGBT devices switching frequency has been increased up to 200 kHz. For each device the dissipated power is separated into switching loss and conduction loss, a frequency dependent and a frequency independent part. Measured waveforms and measurement results with these devices are shown. |
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| Filename: | Unnamed file |
| Filesize: | 3.252 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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