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ANALYSIS OF THE VERTICAL INSULATED BASE TRANSISTOR
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| Author(s) |
P. Godignon; J. Fernández; S. Hidalgo; F. Berta; J. Rebollo; J. Millán |
| Abstract |
A vertical MOS-bipolar power device, the IBT, is presented in this paper. This free latch-up structure has been analyzed by means of two-dimensional numerical simulations and compared with the VDMOS and the IGBT. It is shown that the vertical IBT exhibits higher current capability than the VDMOS and comparable to the IGBT for low-medium voltage applications. A modified IBT structure is also presented to improve its switching behaviour, and compared to the basic IBT structure. |
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| Filename: | Unnamed file |
| Filesize: | 2.864 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-16 by System |
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