| Abstract |
This paper presents measured turn-off losses in different high voltage IGBTs, 1000V and 1200V. The current rating of the tested IGBTs are 50A-100A. Hard switching and switching with a capacitive snubber are analyzed, both at 25°C and at 125°C. The influence of variations in gate resistance is covered. In all the measured IGBTs, the turn-off losses are reduced by including a snubber capacitor. But the amount of loss reduction is shown to be strongly dependent upon the type of IGBT. In IGBTs heavily doped with life time killers, the turn-off losses are strongly temperature dependent and increase rapidly wlth increasing turn-off current. A considerable turn-off loss reduction is gained by adding a snubber capacitor. IGBTs without life time killers, show a low temperature dependence, and by adding a capacitor across the transistor, the tail current and thus the turn-off losses are only slightly reduced. |
