EPE Association: EPE 1997 – 77: Dialogue Session DS1f: MODELLING

EPE 1997 – 77: Dialogue Session DS1f: MODELLING
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   AN ELECTROTHERMAL DMOS MODEL IN ELDO APPLIED TO THE SIMULATION OF AN INTEGRATED H-BRIDGE
By Oliver Schepp; Arno Kostka [View]
[Download]

Abstract: We present an analytical electrothermal model of an integrated H-bridge for the Mixed Mode Simulator ELDO. It combines a physically related thermal RC-network including thermal coupling between the switching devices with a new analytical DMOS model with an additional temperature pin. A comparison between thermal simulation and FEM Analysis of a commercially available module is given as well as a verification of the electrical model by comparison of simulated and datasheet curves. As an application example we show the simulation of switching on a DC motor with the H-bridge device.

   MODELLING THE FORWARD RECOVERY OF THE HIGH POWER DIODE FOR CIRCUIT SIMULATION
By R. Kolessar; B. E. Danielsson [View]
[Download]

Abstract: A power diode forward recovery model suitable for circuit simulation is developed starting from an already existing model with good description of the reverse recovery. Preliminary studies with exact numerical simulation show the importance to consider both low and high injection level conditions during the turn-on phase in order to correctly model the forward recovery of the power diode. From these results, a physics-based model is proposed and implemented in the SABER simulator. The model describes accurately both low and high injection phases and also includes relevant high injection effects such as emitter recombination and carrier-carrier scattering. Validation of the proposed model is performed by comparing simulation results with measurements.

   A NEW MODEL OF MOS TRANSISTOR COMPATIBLE WITH THE AUTOMATIC CIRCUIT SIMULATION
By Z. Bestaoui; C. Batard; B. Feuvrie; C. Bergmann [View]
[Download]

Abstract: Perfecting of power converters digital control and regulation cannot be done without a simulation phase. The aim of this paper is to show the behavioural approach of the MOS through a model described in the state space by an inner model, in order to allow the identification of the parameters of the model from experimental curves.

   THE LUMPED-CHARGE BUFFERED POWER DIODE MODEL FOR HIGH POWER APPLICATIONS
By Z. Hossain; K. J. Olejniczak; E. X. Yang; V. A. K. Temple [View]
[Download]

Abstract: This paper presents a novel soft-recovery power diode model based on the Lumped-Charge modeling technique. This power diode model, an extension of the existing Lumped-Charge diode model, achieves a soft recovery due to the inclusion of a more heavilydoped buffer layer in the drift region. The importance of soft recovery lies in achieving lower ring-up voltages resulting in lower voltage rated devices and the need for less snubber capacitance and/or less effective voltage clamping. This is imperative for high-power circuits where the ring-up voltages are very high due to the ever-present circuit layout stray inductance. Many power diode models have appeared in the literature; unfortunately, none of them accurately represent the transient effects observed via experimentation-particularly in high-power applications. The use of the Lumped-Charge modeling technique facilitates the inclusion of internal physical processes and structural geometries of the device into the model. As a result, this model achieves improved performance by more accurately reproducing transient reverse-recovery effects. The resulting model is verified through Saber® simulation and experimentation for a high-power application circuit.

   AN AUTOMATIC PARAMETER EXTRACTION TECHNIQUE FOR AN IMPROVED PIN DIODE CIRCUIT MODEL
By A. G. M. Strollo; E. Napoli; L. Fratelli; G. Giannini [View]
[Download]

Abstract: In the paper an improved PiN diode model is presented. The model is very effective and its implementation in PSPICE simulator is simple and reliable. An automatic parameter extraction technique for this model is also presented. The parameter extraction procedure does not require an in-depth knowledge of device manufacturing neither particularly complex measurements of device characteristics. The proposed parameter extraction procedure can be carried out in an automatic fashion with the help of a new stochastic global optimization algorithm. The effectiveness of PIN diode model and of parameter extraction technique is verified through a comprehensive set of experimental results.

   HIGH CRITICAL TEMPERATURE SUPERCONDUCTING SWITCHES FOR POWER ELECTRONICS APPLICATIONS
By L. Garcia-Tabares; I. Iglesias; A. Ramos; J. M. Asanza; J. Calero; P. Abramian; L. A. Angurel; C. Diez; X. Obradors; X. Granados [View]
[Download]

Abstract: Present paper describes the working principles calculation methods and experimental results of High Critical Temperature Superconducting Switches for power applications. The first part of the paper analyses the state-of-the art of these devices and the mathematical model to calculate the switching performances . The second part describes the construction and experimental results achieved with several prototypes including the turn-on and the turn-off times. Finally a third part describes future applications including a brief description of a superconducting power supply an active fault current lirniter. Restrictions of these prototypes are also discussed as well as how new materials and manufacturing methods could improve their performances.

   AN ACCURATE CIRCUIT MODEL FOR CORELESS PCB-BASED TRANSFORMERS
By S.Y.R. Hui; H. Chung; S. C. Tang [View]
[Download]

Abstract: Use of coreless PCB transformers eliminates the manual winding procedure of transformers. Coreless PCB-based transformers have been successfully implemented for gate drive circuits for power MOSFETs and IGBTs. This paper describes an accurate model of coreless PCB-based transformers for high·frequency (500kHz to 2MHz) operation. The effects of model parameters that are significant to gate drive performance are discussed. The gatesource capacitance and leakage inductance of the PCB transformer are found to be critical components which limit the operating frequency.

   ANALYTICAL MODEL FOR DYNAMIC AVALANCHE BREAKDOWN IN POWER DEVICES
By L. Göhler; J. Sigg [View]
[Download]

Abstract: The behaviour of avalanche breakdown under the influence of initiating currents and generated carriers is analysed. It is shown, that these mechanisms cause a breakdown voltage shift and a self-limitating avalanche current. A GTO circuit model is enhanced by the findings and a circuit simulation with SABER demonstrates the gain in model accuracy.

   GENERAL APPROACH TO THERMAL SIMULATION OF MODERN SMART POWER MODULES
By M. Furmanczyk; A. Szajfler; A. Napieralski [View]
[Download]

Abstract: Smart Power Devices are composed of power and logic part. The multidomain simulations of the Smart Power module have to be performed during the design process. The electro-thermal simulation allow to examine the mutual influences between the thermal and electrical properties of tested structures. In this paper the two methods of computing the temperature distribution and some simulation conclusions are presented.

   THE IGBT MODEL OPTIMISED FOR THE CIRCUIT ANALYSIS AND DESIGN
By W. Pawelski; A. Napieralski [View]
[Download]

Abstract: In this paper, the circuit-oriented IGBT macromodel with enhanced fitting accuracy of the real device proprieties is presented. Main model parameters can be identified on the basis of simple optimisation procedure supported on little number of the static and transient terminal measurements.

   PSPICE MODEL FOR HIGH VOLTAGE IGBTs
By G. Busatto; L. Fratelli; G. Giannini; A. Polverino [View]
[Download]

Abstract: A PSPICE model suitable to accurately predict the static and dynamic behaviour of high voltage IGBTs is presented. It is developed on a physical basis and includes a good description of carrier distribution inside the low-doped epitaxiallayer, carrier-carrier scattering and non-quasi-static effects. The equation of the model are given in a form which can be easily incorporated in PSPICE simulator in a sub-circuit form. The model has been tested with success on commercially available IGBT modules rated at 3300V and 1200A.

   ELECTROTHERMAL SIMULATION OF FAST SWITCHING INTEGRATED POWER ELECTRONIC CIRCUITS
By P. Vales; J.-M. Dorkel [View]
[Download]

Abstract: The paper presents an original methodology well suited for time saving electrothermal simulation of fast switching hybrid or integrated power circuits. The software developed is based on an explicit coupling process involving a fast thermal simulator and a general purpose electrical simulator. It allows for prediction of the electrothermal induced power dissipation drift in the active areas of the components. The methodology includes thermal coupling effects between adjacent components and has been applied to the study of hard switching circuits working under variable operating conditions.

   ON-STATE ELECTROTHERMAL MODELLING OF LARGE AREA POWER COMPONENTS AND MULTICHIP POWER MODULES
By K. Bellil; P. Tounsi; J.-M. Dorkel; Ph. Leturcq [View]
[Download]

Abstract: The paper presents a tool which associates simple electrical modelling in on-state conditions with a solver of the 3D heat diffusion equation in the chips and package in order to predict on-state current limits of all kind of power devices as well as the impact of damaged die bondings in multichip modules.

EPE 1997 – 77: Dialogue Session DS1f: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 77: Dialogue Session DS1f: MODELLING
	[return to parent folder]

	AN ELECTROTHERMAL DMOS MODEL IN ELDO APPLIED TO THE SIMULATION OF AN INTEGRATED H-BRIDGE By Oliver Schepp; Arno Kostka	[View] [Download]
Abstract: We present an analytical electrothermal model of an integrated H-bridge for the Mixed Mode Simulator ELDO. It combines a physically related thermal RC-network including thermal coupling between the switching devices with a new analytical DMOS model with an additional temperature pin. A comparison between thermal simulation and FEM Analysis of a commercially available module is given as well as a verification of the electrical model by comparison of simulated and datasheet curves. As an application example we show the simulation of switching on a DC motor with the H-bridge device.

	MODELLING THE FORWARD RECOVERY OF THE HIGH POWER DIODE FOR CIRCUIT SIMULATION By R. Kolessar; B. E. Danielsson	[View] [Download]
Abstract: A power diode forward recovery model suitable for circuit simulation is developed starting from an already existing model with good description of the reverse recovery. Preliminary studies with exact numerical simulation show the importance to consider both low and high injection level conditions during the turn-on phase in order to correctly model the forward recovery of the power diode. From these results, a physics-based model is proposed and implemented in the SABER simulator. The model describes accurately both low and high injection phases and also includes relevant high injection effects such as emitter recombination and carrier-carrier scattering. Validation of the proposed model is performed by comparing simulation results with measurements.

	A NEW MODEL OF MOS TRANSISTOR COMPATIBLE WITH THE AUTOMATIC CIRCUIT SIMULATION By Z. Bestaoui; C. Batard; B. Feuvrie; C. Bergmann	[View] [Download]
Abstract: Perfecting of power converters digital control and regulation cannot be done without a simulation phase. The aim of this paper is to show the behavioural approach of the MOS through a model described in the state space by an inner model, in order to allow the identification of the parameters of the model from experimental curves.

	THE LUMPED-CHARGE BUFFERED POWER DIODE MODEL FOR HIGH POWER APPLICATIONS By Z. Hossain; K. J. Olejniczak; E. X. Yang; V. A. K. Temple	[View] [Download]
Abstract: This paper presents a novel soft-recovery power diode model based on the Lumped-Charge modeling technique. This power diode model, an extension of the existing Lumped-Charge diode model, achieves a soft recovery due to the inclusion of a more heavilydoped buffer layer in the drift region. The importance of soft recovery lies in achieving lower ring-up voltages resulting in lower voltage rated devices and the need for less snubber capacitance and/or less effective voltage clamping. This is imperative for high-power circuits where the ring-up voltages are very high due to the ever-present circuit layout stray inductance. Many power diode models have appeared in the literature; unfortunately, none of them accurately represent the transient effects observed via experimentation-particularly in high-power applications. The use of the Lumped-Charge modeling technique facilitates the inclusion of internal physical processes and structural geometries of the device into the model. As a result, this model achieves improved performance by more accurately reproducing transient reverse-recovery effects. The resulting model is verified through Saber® simulation and experimentation for a high-power application circuit.

	AN AUTOMATIC PARAMETER EXTRACTION TECHNIQUE FOR AN IMPROVED PIN DIODE CIRCUIT MODEL By A. G. M. Strollo; E. Napoli; L. Fratelli; G. Giannini	[View] [Download]
Abstract: In the paper an improved PiN diode model is presented. The model is very effective and its implementation in PSPICE simulator is simple and reliable. An automatic parameter extraction technique for this model is also presented. The parameter extraction procedure does not require an in-depth knowledge of device manufacturing neither particularly complex measurements of device characteristics. The proposed parameter extraction procedure can be carried out in an automatic fashion with the help of a new stochastic global optimization algorithm. The effectiveness of PIN diode model and of parameter extraction technique is verified through a comprehensive set of experimental results.

	HIGH CRITICAL TEMPERATURE SUPERCONDUCTING SWITCHES FOR POWER ELECTRONICS APPLICATIONS By L. Garcia-Tabares; I. Iglesias; A. Ramos; J. M. Asanza; J. Calero; P. Abramian; L. A. Angurel; C. Diez; X. Obradors; X. Granados	[View] [Download]
Abstract: Present paper describes the working principles calculation methods and experimental results of High Critical Temperature Superconducting Switches for power applications. The first part of the paper analyses the state-of-the art of these devices and the mathematical model to calculate the switching performances . The second part describes the construction and experimental results achieved with several prototypes including the turn-on and the turn-off times. Finally a third part describes future applications including a brief description of a superconducting power supply an active fault current lirniter. Restrictions of these prototypes are also discussed as well as how new materials and manufacturing methods could improve their performances.

	AN ACCURATE CIRCUIT MODEL FOR CORELESS PCB-BASED TRANSFORMERS By S.Y.R. Hui; H. Chung; S. C. Tang	[View] [Download]
Abstract: Use of coreless PCB transformers eliminates the manual winding procedure of transformers. Coreless PCB-based transformers have been successfully implemented for gate drive circuits for power MOSFETs and IGBTs. This paper describes an accurate model of coreless PCB-based transformers for high·frequency (500kHz to 2MHz) operation. The effects of model parameters that are significant to gate drive performance are discussed. The gatesource capacitance and leakage inductance of the PCB transformer are found to be critical components which limit the operating frequency.

	ANALYTICAL MODEL FOR DYNAMIC AVALANCHE BREAKDOWN IN POWER DEVICES By L. Göhler; J. Sigg	[View] [Download]
Abstract: The behaviour of avalanche breakdown under the influence of initiating currents and generated carriers is analysed. It is shown, that these mechanisms cause a breakdown voltage shift and a self-limitating avalanche current. A GTO circuit model is enhanced by the findings and a circuit simulation with SABER demonstrates the gain in model accuracy.

	GENERAL APPROACH TO THERMAL SIMULATION OF MODERN SMART POWER MODULES By M. Furmanczyk; A. Szajfler; A. Napieralski	[View] [Download]
Abstract: Smart Power Devices are composed of power and logic part. The multidomain simulations of the Smart Power module have to be performed during the design process. The electro-thermal simulation allow to examine the mutual influences between the thermal and electrical properties of tested structures. In this paper the two methods of computing the temperature distribution and some simulation conclusions are presented.

	THE IGBT MODEL OPTIMISED FOR THE CIRCUIT ANALYSIS AND DESIGN By W. Pawelski; A. Napieralski	[View] [Download]
Abstract: In this paper, the circuit-oriented IGBT macromodel with enhanced fitting accuracy of the real device proprieties is presented. Main model parameters can be identified on the basis of simple optimisation procedure supported on little number of the static and transient terminal measurements.

	PSPICE MODEL FOR HIGH VOLTAGE IGBTs By G. Busatto; L. Fratelli; G. Giannini; A. Polverino	[View] [Download]
Abstract: A PSPICE model suitable to accurately predict the static and dynamic behaviour of high voltage IGBTs is presented. It is developed on a physical basis and includes a good description of carrier distribution inside the low-doped epitaxiallayer, carrier-carrier scattering and non-quasi-static effects. The equation of the model are given in a form which can be easily incorporated in PSPICE simulator in a sub-circuit form. The model has been tested with success on commercially available IGBT modules rated at 3300V and 1200A.

	ELECTROTHERMAL SIMULATION OF FAST SWITCHING INTEGRATED POWER ELECTRONIC CIRCUITS By P. Vales; J.-M. Dorkel	[View] [Download]
Abstract: The paper presents an original methodology well suited for time saving electrothermal simulation of fast switching hybrid or integrated power circuits. The software developed is based on an explicit coupling process involving a fast thermal simulator and a general purpose electrical simulator. It allows for prediction of the electrothermal induced power dissipation drift in the active areas of the components. The methodology includes thermal coupling effects between adjacent components and has been applied to the study of hard switching circuits working under variable operating conditions.

	ON-STATE ELECTROTHERMAL MODELLING OF LARGE AREA POWER COMPONENTS AND MULTICHIP POWER MODULES By K. Bellil; P. Tounsi; J.-M. Dorkel; Ph. Leturcq	[View] [Download]
Abstract: The paper presents a tool which associates simple electrical modelling in on-state conditions with a solver of the 3D heat diffusion equation in the chips and package in order to predict on-state current limits of all kind of power devices as well as the impact of damaged die bondings in multichip modules.