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PSPICE MODEL FOR HIGH VOLTAGE IGBTs
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| Author(s) |
G. Busatto; L. Fratelli; G. Giannini; A. Polverino |
| Abstract |
A PSPICE model suitable to accurately predict the static and dynamic
behaviour of high voltage IGBTs is presented. It is developed on a physical basis and includes a good description of carrier distribution inside the low-doped epitaxiallayer, carrier-carrier
scattering and non-quasi-static effects. The equation of the model are given in a form which can be easily incorporated in PSPICE simulator in a sub-circuit form. The model has been tested with success on commercially available IGBT modules rated at 3300V and 1200A. |
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| Filename: | Unnamed file |
| Filesize: | 579.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-04 by System |
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