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A NEW MODEL OF MOS TRANSISTOR COMPATIBLE WITH THE AUTOMATIC CIRCUIT SIMULATION
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| Author(s) |
Z. Bestaoui; C. Batard; B. Feuvrie; C. Bergmann |
| Abstract |
Perfecting of power converters digital control and regulation cannot be done without a simulation phase. The aim of this paper is to show the behavioural approach of the MOS through a model described in the state space by an inner model, in order to allow the identification of the parameters of the model from experimental curves. |
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| Filename: | Unnamed file |
| Filesize: | 480.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-04 by System |
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