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MODELLING THE FORWARD RECOVERY OF THE HIGH POWER DIODE FOR CIRCUIT SIMULATION
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| Author(s) |
R. Kolessar; B. E. Danielsson |
| Abstract |
A power diode forward recovery model suitable for circuit simulation is developed starting from an already
existing model with good description of the reverse recovery. Preliminary studies with exact numerical simulation show the importance to consider both low and high injection level conditions during the turn-on phase in order to correctly model the forward recovery of the power diode. From these results, a physics-based model is proposed and implemented in the SABER simulator. The model describes accurately both low and high injection phases and also includes relevant high injection effects such as emitter recombination and carrier-carrier scattering. Validation of the proposed model is performed
by comparing simulation results with measurements. |
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| Filename: | Unnamed file |
| Filesize: | 445.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-04 by System |
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