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THE LUMPED-CHARGE BUFFERED POWER DIODE MODEL FOR HIGH POWER APPLICATIONS
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| Author(s) |
Z. Hossain; K. J. Olejniczak; E. X. Yang; V. A. K. Temple |
| Abstract |
This paper presents a novel soft-recovery power diode model based on the Lumped-Charge modeling technique. This power diode model, an extension of the existing Lumped-Charge diode model, achieves a soft recovery due to the inclusion of a more heavilydoped buffer layer in the drift region. The importance of soft recovery lies in achieving lower ring-up voltages resulting in lower voltage rated devices and the need for less snubber
capacitance and/or less effective voltage clamping. This is imperative for high-power circuits where the ring-up voltages are very high due to the ever-present circuit layout stray
inductance. Many power diode models have appeared in the literature; unfortunately, none of them accurately represent the transient effects observed via experimentation-particularly in
high-power applications. The use of the Lumped-Charge modeling technique facilitates the inclusion of internal physical processes and structural geometries of the device into the
model. As a result, this model achieves improved performance by more accurately reproducing transient reverse-recovery effects. The resulting model is verified through Saber®
simulation and experimentation for a high-power application circuit. |
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| Filesize: | 496.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-04 by System |
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