EPE Association: EPE 2009 - Subtopic 01-6 - DS: 'New Power Devices and Integration'

EPE 2009 - Subtopic 01-6 - DS: 'New Power Devices and Integration'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-6 - DS: 'New Power Devices and Integration'

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   Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch
By Samuel ARAUJO, Peter ZACHARIAS [View]
[Download]

Abstract: Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching frequency will be discussed.

   APPLICATION OF THE MODERN SEMICONDUCTOR DEVICES BASED ON THE SIC
By Pavel DRABEK [View]
[Download]

Abstract: This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (Silicon Carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free- wheeling SiC schottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2kVA.

   Development of a High Voltage Deep Trench Environment for a Smart Power Technology
By MARTIN KNAIPP [View]
[Download]

Abstract: The paper describes a deep trench module development for a Smart Power Technology by introducing a lateral dielectric isolation. The approach to introduce the new isolation type in a modular way has impact on the process development and the layout environment. The work describes the advantages and the limitations of the new isolation type which results in a new way of product layouting.

   Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power converters
By Florence CAPY, Marie BREIL, frÃ©dÃ©ric RICHARDEAU, jean pierre LAUR, abdelhakim BOURENNANE, jean louis SANCHEZ [View]
[Download]

Abstract: A new self-controlled and self-protected integrated power switch dedicated to self-switching mode power converters is presented. To achieve this function, two original topologies based on a thyristor and an IGBT are proposed. Their operating modes are analyzed with 2D physical simulation and the obtained results are discussed in order to compare the two topologies. The two architectures validate the functionality and the electrical behaviours are efficient. These results motivate the realization of this device offering a promising potential for a wide range of applications.

   Fast Recovery Radiation Enhanced Diffusion (RED) Diode: Palladium vs. Platinum
By Jan VOBECKY, Vit ZAHLAVA, Volodymyr KOMARNITSKYY [View]
[Download]

Abstract: Modern power switches require the complementary diodes which are robust at the turn-off of ever higher currents at higher di/dts and supply voltages. A new technology to increase the ruggedness of free-wheeling and clamping diodes, which is based on the radiation enhanced diffusion (RED) of palladium, has been recently developed. In this work, the RED technology of palladium is confronted with that of the platinum. Silicon P i N diodes (Vbr = 2500 V, Area = 2 cm2, positive bevel, press pack contact) were subjected to the RED of Pd and Pt in the temperature range between 500 and 800 oC to locally control the carrier lifetime and doping profile, if possible. The devices are compared in static (leakage, voltage drop) and dynamic parameters (unclamped low inductance reverse recovery). The RED of Pd is shown to create a low doped P-layer that postpones the dynamic avalanche towards higher line voltages and increases the static breakdown voltage. Platinum does not provide this feature and the lifetime reduction is smaller. While the dynamic parameters of the palladium RED diodes are greatly improved, those of the Pt have much higher maximal recovery current and poor SOA. In spite of the qualitatively similar electronic properties of the Pt and Pd deep levels, the accumulation of Pt in the region with radiation defects is found to differ quantitatively during the RED process in the temperature range 500 â€“ 650 oC. The RED of Pt is therefore evaluated as unsuitable for the local lifetime control using the existing RED process.

   High performances CVD diamond Schottky barrier diode - Simulation and carrying out
By SODJAN KONE, HUI DING, Henri SCHNEIDER, KARINE ISOIRD, Gabriel CIVRAC [View]
[Download]

Abstract: We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were NA ∼ 1,2.1017 cm-3 and ΦΒ = 1,8 eV respectively. Finally, forward current-voltage experimental measurements and simulation characteristics are compared. The device yields a maximum current density of 1200 A/cm2 on forward direction and breakdown voltage of 25V at room temperature. Although promising, these results do not meet simulation predictions.

   High-Temperature Stability Performance of 4H-SiC Schottky Diodes
By Enrique MASET, Esteban SANCHIS-KILDERS, JosÃ© JORDÃN, Juan Bta. EJEA, AgustÃn FERRERES, Vicente ESTEVE, JosÃ© MILLÃN, Philippe GODIGNON [View]
[Download]

Abstract: Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270ÂºC during 600 hours has demonstrated the capability to operate up to 300ÂºC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.

   Low losses bidirectional switch for AC mains
By Chawki BENBOUJEMA, Ambroise SCHELLMANNS, Nathalie BATUT, Jean Baptiste QUOIRIN, Laurent VENTURA [View]
[Download]

Abstract: Two power bipolar transistors structures called the trench base-shielded bipolar transistor (TBSBT) and Gate Associated Transistor (GAT) were proposed and experimentally demonstrated. Those structures incorporate deep P+ area in the purpose to achieve high current gain without compromising on the breakdown voltage. In this paper, we suggest a new behaviour for a bipolar bidirectional switch with very low on-state voltage drop, and having a fully turn-on/turn-off control for main application. We propose to use two high current gain bipolar power transistors, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation.

   Modeling and Simulation of 2 kV 50 A SiC MOSFET/JBS Power Modules
By Zheng CHEN, Rolando BURGOS, Dushan BOROYEVICH, Fred WANG, Scott LESLIE [View]
[Download]

Abstract: This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/Junction-Barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on the Hefner MOSFET model and published experimental data. The device and package models are then combined and used to run circuit simulations of a double-pulse tester. The simulation results obtained provide good insight into the fast switching behavior and parametric dependencies of the paralleled SiC dice, which will aid in the module physical layout and gate driver design, as well as switching and conduction loss analysis.

   On switching losses analysis for Si and SiC diodes in induction heating series resonant inverters.
By Jose JORDÃN, Cesar CASES, Jose Miguel MAGRANER, Vicente ESTEVE, Enrique DEDE, Agustin FERRERES, Juan EJEA, Eva GUMBAU [View]
[Download]

Abstract: In high frequency induction heating applications, the inverters used to generate the high frequency alternating current are implemented with MOSFET. In order to avoid the failure of the MOSFET intrinsic diode, each switch is formed by two extern diodes which are connected to the MOSFET, one in series, and the other one in anti-parallel with both devices. If the power regulation is achieved by using the frequency variation control strategy, the MOSFET turn-off causes the turn-on of the anti-parallel diode in the same arm of the inverter. In given conditions of load (null load), the MOSFET turns-off the maximum current. Hence the diode turns-on with maximum current. On switching losses in fast Silicon diodes cannot be neglected for switching frequencies around 400kHz. In this paper, a solution to reduce the on switching losses in the diodes is proposed by replacing Si diodes by SiC diodes with similar characteristics. For this purpose, the on switching losses have been characterised for several Silicon Carbide diodes. Finally, the results were verified in a 25kW inverter working at 400kHz.

   Reverse characteristics of a snappy recovery diode with the current snubber in comparison with a soft recovery diode and SiC Schottky type diode
By Yuriy KRASNIKOV, Vladimir POPOV [View]
[Download]

Abstract: A new low-cost snubber circuit for diode recovery in hard switching converters is proposed. A diode with snappy recovery behaviour in coupling with the proposed current snubber has close to ideal recovery process, so such a diode seems to be more promising than a soft recovery diode for high-voltage high-power applications to which efficiency and reliability are the main care.

   Switching assessment of GaN transistors for power conversion applications
By Jo DAS, Denis MARCON, Marleen VAN HOVE, Joff DERLUYN, Marianne GERMAIN, Gustaaf BORGHS [View]
[Download]

Abstract: GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows for a cost effective solution for power conversion.

   THERMAL RUNAWAY EVALUATION FOR NEW HIGH-TEMPERATURE TRIACS IN STEADY-STATE OPERATION
By Sylvain MERCIER, Laurent GONTHIER [View]
[Download]

Abstract: This paper deals with thermal runaway that could occur with the new high-temperature Triacs that are used with junction temperatures up to 150 Â°C in steady state. The conditions to avoid thermal runaway at Triac switch-off are discussed. An experimental validation is presented and compared with a theoretical analysis. The thermal runaway issue is evaluated for the broad range of new high-temperature Triacs.

EPE 2009 - Subtopic 01-6 - DS: 'New Power Devices and Integration'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-6 - DS: 'New Power Devices and Integration'
	[return to parent folder]

	Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch By Samuel ARAUJO, Peter ZACHARIAS	[View] [Download]
Abstract: Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching frequency will be discussed.

	APPLICATION OF THE MODERN SEMICONDUCTOR DEVICES BASED ON THE SIC By Pavel DRABEK	[View] [Download]
Abstract: This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (Silicon Carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free- wheeling SiC schottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2kVA.

	Development of a High Voltage Deep Trench Environment for a Smart Power Technology By MARTIN KNAIPP	[View] [Download]
Abstract: The paper describes a deep trench module development for a Smart Power Technology by introducing a lateral dielectric isolation. The approach to introduce the new isolation type in a modular way has impact on the process development and the layout environment. The work describes the advantages and the limitations of the new isolation type which results in a new way of product layouting.

	Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power converters By Florence CAPY, Marie BREIL, frÃ©dÃ©ric RICHARDEAU, jean pierre LAUR, abdelhakim BOURENNANE, jean louis SANCHEZ	[View] [Download]
Abstract: A new self-controlled and self-protected integrated power switch dedicated to self-switching mode power converters is presented. To achieve this function, two original topologies based on a thyristor and an IGBT are proposed. Their operating modes are analyzed with 2D physical simulation and the obtained results are discussed in order to compare the two topologies. The two architectures validate the functionality and the electrical behaviours are efficient. These results motivate the realization of this device offering a promising potential for a wide range of applications.

	Fast Recovery Radiation Enhanced Diffusion (RED) Diode: Palladium vs. Platinum By Jan VOBECKY, Vit ZAHLAVA, Volodymyr KOMARNITSKYY	[View] [Download]
Abstract: Modern power switches require the complementary diodes which are robust at the turn-off of ever higher currents at higher di/dts and supply voltages. A new technology to increase the ruggedness of free-wheeling and clamping diodes, which is based on the radiation enhanced diffusion (RED) of palladium, has been recently developed. In this work, the RED technology of palladium is confronted with that of the platinum. Silicon P i N diodes (Vbr = 2500 V, Area = 2 cm2, positive bevel, press pack contact) were subjected to the RED of Pd and Pt in the temperature range between 500 and 800 oC to locally control the carrier lifetime and doping profile, if possible. The devices are compared in static (leakage, voltage drop) and dynamic parameters (unclamped low inductance reverse recovery). The RED of Pd is shown to create a low doped P-layer that postpones the dynamic avalanche towards higher line voltages and increases the static breakdown voltage. Platinum does not provide this feature and the lifetime reduction is smaller. While the dynamic parameters of the palladium RED diodes are greatly improved, those of the Pt have much higher maximal recovery current and poor SOA. In spite of the qualitatively similar electronic properties of the Pt and Pd deep levels, the accumulation of Pt in the region with radiation defects is found to differ quantitatively during the RED process in the temperature range 500 â€“ 650 oC. The RED of Pt is therefore evaluated as unsuitable for the local lifetime control using the existing RED process.

	High performances CVD diamond Schottky barrier diode - Simulation and carrying out By SODJAN KONE, HUI DING, Henri SCHNEIDER, KARINE ISOIRD, Gabriel CIVRAC	[View] [Download]
Abstract: We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were NA ∼ 1,2.1017 cm-3 and ΦΒ = 1,8 eV respectively. Finally, forward current-voltage experimental measurements and simulation characteristics are compared. The device yields a maximum current density of 1200 A/cm2 on forward direction and breakdown voltage of 25V at room temperature. Although promising, these results do not meet simulation predictions.

	High-Temperature Stability Performance of 4H-SiC Schottky Diodes By Enrique MASET, Esteban SANCHIS-KILDERS, JosÃ© JORDÃN, Juan Bta. EJEA, AgustÃn FERRERES, Vicente ESTEVE, JosÃ© MILLÃN, Philippe GODIGNON	[View] [Download]
Abstract: Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270ÂºC during 600 hours has demonstrated the capability to operate up to 300ÂºC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.

	Low losses bidirectional switch for AC mains By Chawki BENBOUJEMA, Ambroise SCHELLMANNS, Nathalie BATUT, Jean Baptiste QUOIRIN, Laurent VENTURA	[View] [Download]
Abstract: Two power bipolar transistors structures called the trench base-shielded bipolar transistor (TBSBT) and Gate Associated Transistor (GAT) were proposed and experimentally demonstrated. Those structures incorporate deep P+ area in the purpose to achieve high current gain without compromising on the breakdown voltage. In this paper, we suggest a new behaviour for a bipolar bidirectional switch with very low on-state voltage drop, and having a fully turn-on/turn-off control for main application. We propose to use two high current gain bipolar power transistors, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation.

	Modeling and Simulation of 2 kV 50 A SiC MOSFET/JBS Power Modules By Zheng CHEN, Rolando BURGOS, Dushan BOROYEVICH, Fred WANG, Scott LESLIE	[View] [Download]
Abstract: This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/Junction-Barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on the Hefner MOSFET model and published experimental data. The device and package models are then combined and used to run circuit simulations of a double-pulse tester. The simulation results obtained provide good insight into the fast switching behavior and parametric dependencies of the paralleled SiC dice, which will aid in the module physical layout and gate driver design, as well as switching and conduction loss analysis.

	On switching losses analysis for Si and SiC diodes in induction heating series resonant inverters. By Jose JORDÃN, Cesar CASES, Jose Miguel MAGRANER, Vicente ESTEVE, Enrique DEDE, Agustin FERRERES, Juan EJEA, Eva GUMBAU	[View] [Download]
Abstract: In high frequency induction heating applications, the inverters used to generate the high frequency alternating current are implemented with MOSFET. In order to avoid the failure of the MOSFET intrinsic diode, each switch is formed by two extern diodes which are connected to the MOSFET, one in series, and the other one in anti-parallel with both devices. If the power regulation is achieved by using the frequency variation control strategy, the MOSFET turn-off causes the turn-on of the anti-parallel diode in the same arm of the inverter. In given conditions of load (null load), the MOSFET turns-off the maximum current. Hence the diode turns-on with maximum current. On switching losses in fast Silicon diodes cannot be neglected for switching frequencies around 400kHz. In this paper, a solution to reduce the on switching losses in the diodes is proposed by replacing Si diodes by SiC diodes with similar characteristics. For this purpose, the on switching losses have been characterised for several Silicon Carbide diodes. Finally, the results were verified in a 25kW inverter working at 400kHz.

	Reverse characteristics of a snappy recovery diode with the current snubber in comparison with a soft recovery diode and SiC Schottky type diode By Yuriy KRASNIKOV, Vladimir POPOV	[View] [Download]
Abstract: A new low-cost snubber circuit for diode recovery in hard switching converters is proposed. A diode with snappy recovery behaviour in coupling with the proposed current snubber has close to ideal recovery process, so such a diode seems to be more promising than a soft recovery diode for high-voltage high-power applications to which efficiency and reliability are the main care.

	Switching assessment of GaN transistors for power conversion applications By Jo DAS, Denis MARCON, Marleen VAN HOVE, Joff DERLUYN, Marianne GERMAIN, Gustaaf BORGHS	[View] [Download]
Abstract: GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows for a cost effective solution for power conversion.

	THERMAL RUNAWAY EVALUATION FOR NEW HIGH-TEMPERATURE TRIACS IN STEADY-STATE OPERATION By Sylvain MERCIER, Laurent GONTHIER	[View] [Download]
Abstract: This paper deals with thermal runaway that could occur with the new high-temperature Triacs that are used with junction temperatures up to 150 Â°C in steady state. The conditions to avoid thermal runaway at Triac switch-off are discussed. An experimental validation is presented and compared with a theoretical analysis. The thermal runaway issue is evaluated for the broad range of new high-temperature Triacs.