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High-Temperature Stability Performance of 4H-SiC Schottky Diodes
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| Author(s) |
Enrique MASET, Esteban SANCHIS-KILDERS, José JORDÃN, Juan Bta. EJEA, AgustÃn FERRERES, Vicente ESTEVE, José MILLÃN, Philippe GODIGNON |
| Abstract |
Silicon Carbide 300V-5A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270ºC during 600 hours has demonstrated the capability to operate up to 300ºC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface In this paper we present the development and characterization of a 300V Schottky Silicon Carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation. |
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| Filename: | 0338-epe2009-full-14014440.pdf |
| Filesize: | 1.024 MB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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