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Low losses bidirectional switch for AC mains
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| Author(s) |
Chawki BENBOUJEMA, Ambroise SCHELLMANNS, Nathalie BATUT, Jean Baptiste QUOIRIN, Laurent VENTURA |
| Abstract |
Two power bipolar transistors structures called the trench base-shielded bipolar transistor (TBSBT) and Gate Associated Transistor (GAT) were proposed and experimentally demonstrated. Those structures incorporate deep P+ area in the purpose to achieve high current gain without compromising on the breakdown voltage. In this paper, we suggest a new behaviour for a bipolar bidirectional switch with very low on-state voltage drop, and having a fully turn-on/turn-off control for main application. We propose to use two high current gain bipolar power transistors, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation. |
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| Filename: | 0666-epe2009-full-14440904.pdf |
| Filesize: | 606.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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