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Switching assessment of GaN transistors for power conversion applications
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| Author(s) |
Jo DAS, Denis MARCON, Marleen VAN HOVE, Joff DERLUYN, Marianne GERMAIN, Gustaaf BORGHS |
| Abstract |
GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows for a cost effective solution for power conversion. |
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| Filename: | 0801-epe2009-full-16111569.pdf |
| Filesize: | 177.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2010-01-27 by System |
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