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   Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch   [View] 
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 Author(s)   Samuel ARAUJO, Peter ZACHARIAS 
 Abstract   Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching frequency will be discussed. 
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Filename:0841-epe2009-full-08041945.pdf
Filesize:400.9 KB
 Type   Members Only 
 Date   Last modified 2010-01-27 by System