EPE Association: EPE 2007 - Subtopic 01-5

EPE 2007 - Subtopic 01-5 - DS: Active devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-5 - DS: Active devices

   [return to parent folder]

   600V SOI Gate Driver IC with Advanced Level Shifter Concepts for Medium and High Power Applications
By HERZER Reinhard; ROSSBERG Matthias; VOGLER Bastian [View]
[Download]

Abstract: An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively.

   A new Cycle Test System emulating Inductive Switching Waveforms
By EDER Herbert; GLAVANOVICS Michael; KOSEL Vladimir; SMORODIN Tobias; KOECK Helmut [View]
[Download]

Abstract: Cycle life testing of smart power switches requires significant hardware effort to provide the required ohmic-inductive load patterns. A new reliability test system for research purposes is therefore introduced that generates arbitrary current waveforms to emulate inductive switching behavior. This allows flexible cycle stress testing of integrated power switches under arbitrary application conditions. The current drivers of the proposed "ARCTIS" test system are protected from thermal overload in case of failure of a stressed device using a combination of case temperature sensing and a thermal equivalent circuit. Therefore the power MOSFETs in the output stage may be utilized to the limits of their dynamical safe operating area. All devices under test are continuously monitored for short circuit and open load failures. The respective waveforms and failure events are digitally recorded by the PXI-based control system to obtain a statistical basis for the evaluation of cycle life time.

   A Novel High Channel Density Trench Power MOSFETs Design by Asymmetric Wing-cell Structure
By CHIEN Fengtso; LIAO Chien-Nan; TSAI Yao-Tsung [View]
[Download]

Abstract: A new cell structure Power MOSFET, which exhibits a lower on-state resistance and higher channel density than the conventional layout geometry, is proposed in this research. Vertical trench Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. In this study, we propose, fabricate, and analyze a wing cell structure Power MOSFET. In addition, the asymmetric wing cell structure is fabricated and compared with the conventional structures. The on resistance of the proposed devices can be further reduced. Both simulations and experiments show this structure have a lower on resistance than the original design. We also found that the avalanche characteristics of the proposed device are not sacrificed owing to higher channel density. One can also use this wing-cell concept to avoid the closed cell structure patents.

   A Physics-based Power Diode Model Optimized Through Parameter Extraction with Experiment Basis
By CHIBANTE Rui; CARVALHO Adriano; ARAUJO Armando [View]
[Download]

Abstract: This paper presents a physics-based power diode model with parameters established through an extraction procedure validated experimentally. The core of the model is based on a Finite Element approach that solves for electron/hole concentration in low doped zone of the device. As physical based models need a significant number of parameters an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters, needed for physics-based semiconductor models, requiring some simple device waveform measurements. Implementation of developed power diode model, in SPICE like simulators, and extraction procedure is presented. Experimental validation is performed.

   Active Snubber Circuit for Source Commutated Converters
By NORRGA Staffan; KJELLQVIST Tommy [View]
[Download]

Abstract: This paper describes a gate control method where an IGBT is controlled in its linear region by means of a closed control loop in order to regulate the voltage slope during turn-on and to clamp the voltage of an anti-parallel diode in a source commutated converter. Controlling the voltage slope may be necessary in a high voltage converter to avoid emission of EMI or to avoid triggering oscillations which may cause insulation failure. Controlling the switching trajectory without influence from the device characteristics is important where series-connection is necessary to increase the overall blocking voltage. The control method has been verified by means of a prototype.

   Analysis of the base current and the saturation voltage in 4H-SiC power BJTs
By ZETTERLING Carl-Mikael; Ã–STLING Mikael; DOMEIJ Martin; LEE Hyung-Seok [View]
[Download]

Abstract: Silicon carbide (SiC) power bipolar junction transistors are interesting competitors to Si IGBTs for 1200 V power electronics applications. Advantages of SiC BJTs are low collector-emitter saturation voltages, little stored charge and high temperature capability. In this work, SiC NPN power BJTs with common emitter current gains of 40 have been fabricated and characterized. Electrical measurements for BJTs with different emitter widths indicate that the current gain is limited by surface recombination. A low value of VCESAT=0.9 V at JC=100 A/cm2 was obtained for small and large area (3.4 mm2) BJTs and correlated with the formation of low-resistive ohmic contacts to the base. Large area BJTs were shown to operate with a current gain of 48 in pulsed mode at a collector current of 12 A corresponding to JC=360 A/cm2.

   Benefits of System-oriented IGBT Module Design for High Power Inverters
By LUNIEWSKI Piotr; JANSEN Uwe [View]
[Download]

Abstract: In nowadays designs for industrial drives or renewably energy systems many high power inverters in power level up to 1 MW or even beyond that rating are designed using IGBT modules in the voltage class of 1200 V or 1700 V. The design of such an inverter imposes a significant challenge to the engineering team since currents in the order of several thousands ampere have to be switched within fractions of a microsecond. Switching tests using a parallel configuration of three modules controlled by a modular driver system consisting of a central driver and local boosters are presented. Thermal design aspects for the power circuit as well as for the driver are investigated considering the increased operating temperature of the IGBTs of 150C.

   Design approach of newly developed 3.3kV IGBT modules
By IURA Shinichi; THAL Eckhard; DONLON John [View]
[Download]

Abstract: High Voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3kV level, a new IGBT and Free wheeling Diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi Method experiments to find the most influential design factors and to secure the most robust design. 3.3kV IGBT modules are used in high power inverter applications where low loss and fault tolerance are key considerations. For the IGBT chip this means low on-state conduction loss without sacrifice of switching and short circuit Safe Operating Area (SOA). For the FWD chip this means strong forward surge current and I2t capability. Simulation and experimental investigation were combined to develop new IGBT and FWD chips that meet these requirements for a more robust 3.3kV IGBT module.

   Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
By PLANSON Dominique; GHEDIRA Sami ; MOREL HervÃ©; BEN SALAH Tarek; RISALETTO Damien; RAYNAUD Christophe; BESBES Kamel; BERGOGNE Dominique [View]
[Download]

Abstract: A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. Parameters extracted from DMTVCA and OCVD techniques is validated in a buck converter on a resistive load. The experimental set-up enable to measure nice current and voltage transient characteristics, i.e. without noise and high parasitic wiring influence. Experimental results are confronted to device simulations and a good agreement is found.

   Evaluation of Silicon Carbide Devices for Hybrid Vehicle Drives
By ROBERTS Graham; MAWBY Philip; UETA Takashi; NISIJIMA Tosifumi; HAMADA Kimimori; BRYANT Angus [View]
[Download]

Abstract: This paper describes an integrated simulation framework for modelling inverter performance, and evaluating power devices in hybrid electric vehicle drives to include SiC Schottky diodes and MOSFETs. Based in MATLAB/Simulink, a novel method of decoupling the device and inverter simulation is used with these new material devices. An illustration is given for a hybrid vehicle subjected to a real driving cycle. The simulation framework offers the potential to rapidly improve the inverter design process, and to evaluate new material device selection quickly.

   Feed Forward Control of Turn off Performances of an IGBT in Short Circuit Conditions
By GRBOVIC Petar [View]
[Download]

Abstract: This paper presents a short overview of an IGBT short circuit failure due to over-voltage, and discusses some protection methods. Every new generation of high power IGBT becomes faster and faster, with the collector current fall time of less than 100 ns, sometimes even 50 ns. Fast switching of the collector current, especially at current of 200 A or more, introduces a problem of turn off over-voltage. In case of overload or short circuit, the peak voltage on IGBT may exceed the break down voltage. As a result, the device can catastrophically fail in several tens of nanoseconds after collapse of the collector emitter voltage. To prevent a catastrophic failure, an advanced gate drive circuit has to be used instead of a standard gate drive with pure resistive gate control. A novel IGBT gate driver based on feed-forward control of the collector current slope and the collector emitter over-voltage in short circuit conditions is presented in this paper

   High temperature characterization of SiC-JFET and modelling
By MOREL Herve; RAYNAUD Christophe; PLANSON Dominique; MOUSA Rami [View]
[Download]

Abstract: Silicon Carbide (SiC) is considered as the wide band gap semiconductor material that can presently compete with Silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of extreme importance for designing and analyzing converter circuit, in particular, if comparisons with Si devices should be performed. In this paper, three different kinds of Silicon Carbide JFET samples were characterized at temperatures up to 225C. The characterization is based on the DC (Current - Voltage) characteristic measurements using a curve tracer and on the AC (Capacitance - Voltage) measurements using an impedance analyzer. We keep in mind to establish an analytical model that will be used in the design of a power converter.

   High Voltage, High Power Switches on CVD Diamond
By SCHNEIDER Henri [View]
[Download]

Abstract: Diamond exceptional electronic and thermal properties make it a very promising material for future applications in power electronics, especially for high voltage and/or high temperature applications. In this paper, the principle of high power, high voltage switches that take advantage of these properties are illustrated by simulations. Technological steps necessary to their fabrication have been developed. We present heavily B-doped layers, the way we characterized them and ohmic contacts deposited on them.

   Low EMI noise Techniques of the 6th Generation IGBT module
By IGARASHI Seiki [View]
[Download]

Abstract: This paper describes the mechanism of radiation EMI noise coming from power electronics and introduces the applied technology of Fuji 6th generation IGBT modules, which have drastically improved the trade-off of radiation EMI noise and power dissipation loss. The application of new packaging technology has achieved a reduction in radiation noise of about -5dB by reducing the radiation noise loop area. New trench gate IGBTs have achieved a reduction in the radiation noise without significantly increasing switching losses. As a result, the total radiation noise is reduced by -15 dB with the same dissipation losses compared to the conventional IGBT.

   Preliminary experimental evaluation on PT-IGBT in parallel connection
By SELGI Lorenzo ; FRAGAPANE Leonardo; MELITO Maurizio; SORRENTINO Giuseppe [View]
[Download]

Abstract: This paper presents the problems associated with the parallel connection of Punch Through IGBTs, such as: thermal stability and current balance. An experimental investigation is conducted in the simplest case of two IGBT working in hard switching on an inductive load; a thermal analysis was performed by means of an infrared camera.

   Study on advanced power device performance under real circuit conditions with an exact power loss simulator
By OHASHI Hiromichi; HARADA Shinsuke; TAKAO Kazuto; HAYASHI Yusuke [View]
[Download]

Abstract: Power losses of 700V 2.7mohmcm2 SiC-MOSFETs including influences of circuit stray inductances have been investigated with an originally developed circuit power loss simulator. The device parameters of the SiC-MOSFETs for the power loss calculation are extracted from a SiC-IEMOSFET fabricated at AIST PERC. The power losses of three types of chip areas are investigated and compared to power loss of a CoolMOS. The switching loss energies of the SiC-MOSFETs are larger than that of the CoolMOS in the same circuit conditions. The maximum switching frequencies of the SiC-MOSFETs are 1/2 ~ 2/3 times lower than that of the CoolMOS. Based on total circuit power loss calculation results, heatsink volumes for a half bridge type DC-DC converter at 200kHz operation are estimated. In the case of the SiC-MOSFET3(smallest chip size)/SiC-SBD pair, the heatsink volume can be reduced to about 45\% compared to the CoolMOS/SiC-SBD pair due to the Tj=200˚C operation and the lower circuit power loss.

   VHDL-AMS model of IGBT for electro-thermal simulation
By IBRAHIM Their; MRAD Sabrine; ALLARD Bruno; MOREL HervÃ© [View]
[Download]

Abstract: Many IGBT models have been published but none using VHDL-AMS language. The paper objective is to detail the electro-thermal simulation of IGBT and the coupling between electrical and thermal models using VHDL-AMS as a simulation language. This technique uses an electric circuit simulator and is based on a power IGBT model with temperature-dependent characteristics. Particular attention will be given to the extraction of model parameters. A novel electro-thermal coupling simulation is proposed. The simulation results using electrical and electro-thermal model show good agreements with measurement results. The compact thermal model is validated by a comparison to measured temperature transient responses.

EPE 2007 - Subtopic 01-5 - DS: Active devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-5 - DS: Active devices
	[return to parent folder]

	600V SOI Gate Driver IC with Advanced Level Shifter Concepts for Medium and High Power Applications By HERZER Reinhard; ROSSBERG Matthias; VOGLER Bastian	[View] [Download]
Abstract: An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively.

	A new Cycle Test System emulating Inductive Switching Waveforms By EDER Herbert; GLAVANOVICS Michael; KOSEL Vladimir; SMORODIN Tobias; KOECK Helmut	[View] [Download]
Abstract: Cycle life testing of smart power switches requires significant hardware effort to provide the required ohmic-inductive load patterns. A new reliability test system for research purposes is therefore introduced that generates arbitrary current waveforms to emulate inductive switching behavior. This allows flexible cycle stress testing of integrated power switches under arbitrary application conditions. The current drivers of the proposed "ARCTIS" test system are protected from thermal overload in case of failure of a stressed device using a combination of case temperature sensing and a thermal equivalent circuit. Therefore the power MOSFETs in the output stage may be utilized to the limits of their dynamical safe operating area. All devices under test are continuously monitored for short circuit and open load failures. The respective waveforms and failure events are digitally recorded by the PXI-based control system to obtain a statistical basis for the evaluation of cycle life time.

	A Novel High Channel Density Trench Power MOSFETs Design by Asymmetric Wing-cell Structure By CHIEN Fengtso; LIAO Chien-Nan; TSAI Yao-Tsung	[View] [Download]
Abstract: A new cell structure Power MOSFET, which exhibits a lower on-state resistance and higher channel density than the conventional layout geometry, is proposed in this research. Vertical trench Power MOSFETs are generally designed by either squared (closed) cell or stripe (linear) cell geometry; each has its own advantages and drawbacks. In this study, we propose, fabricate, and analyze a wing cell structure Power MOSFET. In addition, the asymmetric wing cell structure is fabricated and compared with the conventional structures. The on resistance of the proposed devices can be further reduced. Both simulations and experiments show this structure have a lower on resistance than the original design. We also found that the avalanche characteristics of the proposed device are not sacrificed owing to higher channel density. One can also use this wing-cell concept to avoid the closed cell structure patents.

	A Physics-based Power Diode Model Optimized Through Parameter Extraction with Experiment Basis By CHIBANTE Rui; CARVALHO Adriano; ARAUJO Armando	[View] [Download]
Abstract: This paper presents a physics-based power diode model with parameters established through an extraction procedure validated experimentally. The core of the model is based on a Finite Element approach that solves for electron/hole concentration in low doped zone of the device. As physical based models need a significant number of parameters an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters, needed for physics-based semiconductor models, requiring some simple device waveform measurements. Implementation of developed power diode model, in SPICE like simulators, and extraction procedure is presented. Experimental validation is performed.

	Active Snubber Circuit for Source Commutated Converters By NORRGA Staffan; KJELLQVIST Tommy	[View] [Download]
Abstract: This paper describes a gate control method where an IGBT is controlled in its linear region by means of a closed control loop in order to regulate the voltage slope during turn-on and to clamp the voltage of an anti-parallel diode in a source commutated converter. Controlling the voltage slope may be necessary in a high voltage converter to avoid emission of EMI or to avoid triggering oscillations which may cause insulation failure. Controlling the switching trajectory without influence from the device characteristics is important where series-connection is necessary to increase the overall blocking voltage. The control method has been verified by means of a prototype.

	Analysis of the base current and the saturation voltage in 4H-SiC power BJTs By ZETTERLING Carl-Mikael; Ã–STLING Mikael; DOMEIJ Martin; LEE Hyung-Seok	[View] [Download]
Abstract: Silicon carbide (SiC) power bipolar junction transistors are interesting competitors to Si IGBTs for 1200 V power electronics applications. Advantages of SiC BJTs are low collector-emitter saturation voltages, little stored charge and high temperature capability. In this work, SiC NPN power BJTs with common emitter current gains of 40 have been fabricated and characterized. Electrical measurements for BJTs with different emitter widths indicate that the current gain is limited by surface recombination. A low value of VCESAT=0.9 V at JC=100 A/cm2 was obtained for small and large area (3.4 mm2) BJTs and correlated with the formation of low-resistive ohmic contacts to the base. Large area BJTs were shown to operate with a current gain of 48 in pulsed mode at a collector current of 12 A corresponding to JC=360 A/cm2.

	Benefits of System-oriented IGBT Module Design for High Power Inverters By LUNIEWSKI Piotr; JANSEN Uwe	[View] [Download]
Abstract: In nowadays designs for industrial drives or renewably energy systems many high power inverters in power level up to 1 MW or even beyond that rating are designed using IGBT modules in the voltage class of 1200 V or 1700 V. The design of such an inverter imposes a significant challenge to the engineering team since currents in the order of several thousands ampere have to be switched within fractions of a microsecond. Switching tests using a parallel configuration of three modules controlled by a modular driver system consisting of a central driver and local boosters are presented. Thermal design aspects for the power circuit as well as for the driver are investigated considering the increased operating temperature of the IGBTs of 150C.

	Design approach of newly developed 3.3kV IGBT modules By IURA Shinichi; THAL Eckhard; DONLON John	[View] [Download]
Abstract: High Voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3kV level, a new IGBT and Free wheeling Diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi Method experiments to find the most influential design factors and to secure the most robust design. 3.3kV IGBT modules are used in high power inverter applications where low loss and fault tolerance are key considerations. For the IGBT chip this means low on-state conduction loss without sacrifice of switching and short circuit Safe Operating Area (SOA). For the FWD chip this means strong forward surge current and I2t capability. Simulation and experimental investigation were combined to develop new IGBT and FWD chips that meet these requirements for a more robust 3.3kV IGBT module.

	Electrical characterization of 5kV SiC bipolar diodes in switching transient regime By PLANSON Dominique; GHEDIRA Sami ; MOREL HervÃ©; BEN SALAH Tarek; RISALETTO Damien; RAYNAUD Christophe; BESBES Kamel; BERGOGNE Dominique	[View] [Download]
Abstract: A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. Parameters extracted from DMTVCA and OCVD techniques is validated in a buck converter on a resistive load. The experimental set-up enable to measure nice current and voltage transient characteristics, i.e. without noise and high parasitic wiring influence. Experimental results are confronted to device simulations and a good agreement is found.

	Evaluation of Silicon Carbide Devices for Hybrid Vehicle Drives By ROBERTS Graham; MAWBY Philip; UETA Takashi; NISIJIMA Tosifumi; HAMADA Kimimori; BRYANT Angus	[View] [Download]
Abstract: This paper describes an integrated simulation framework for modelling inverter performance, and evaluating power devices in hybrid electric vehicle drives to include SiC Schottky diodes and MOSFETs. Based in MATLAB/Simulink, a novel method of decoupling the device and inverter simulation is used with these new material devices. An illustration is given for a hybrid vehicle subjected to a real driving cycle. The simulation framework offers the potential to rapidly improve the inverter design process, and to evaluate new material device selection quickly.

	Feed Forward Control of Turn off Performances of an IGBT in Short Circuit Conditions By GRBOVIC Petar	[View] [Download]
Abstract: This paper presents a short overview of an IGBT short circuit failure due to over-voltage, and discusses some protection methods. Every new generation of high power IGBT becomes faster and faster, with the collector current fall time of less than 100 ns, sometimes even 50 ns. Fast switching of the collector current, especially at current of 200 A or more, introduces a problem of turn off over-voltage. In case of overload or short circuit, the peak voltage on IGBT may exceed the break down voltage. As a result, the device can catastrophically fail in several tens of nanoseconds after collapse of the collector emitter voltage. To prevent a catastrophic failure, an advanced gate drive circuit has to be used instead of a standard gate drive with pure resistive gate control. A novel IGBT gate driver based on feed-forward control of the collector current slope and the collector emitter over-voltage in short circuit conditions is presented in this paper

	High temperature characterization of SiC-JFET and modelling By MOREL Herve; RAYNAUD Christophe; PLANSON Dominique; MOUSA Rami	[View] [Download]
Abstract: Silicon Carbide (SiC) is considered as the wide band gap semiconductor material that can presently compete with Silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of extreme importance for designing and analyzing converter circuit, in particular, if comparisons with Si devices should be performed. In this paper, three different kinds of Silicon Carbide JFET samples were characterized at temperatures up to 225C. The characterization is based on the DC (Current - Voltage) characteristic measurements using a curve tracer and on the AC (Capacitance - Voltage) measurements using an impedance analyzer. We keep in mind to establish an analytical model that will be used in the design of a power converter.

	High Voltage, High Power Switches on CVD Diamond By SCHNEIDER Henri	[View] [Download]
Abstract: Diamond exceptional electronic and thermal properties make it a very promising material for future applications in power electronics, especially for high voltage and/or high temperature applications. In this paper, the principle of high power, high voltage switches that take advantage of these properties are illustrated by simulations. Technological steps necessary to their fabrication have been developed. We present heavily B-doped layers, the way we characterized them and ohmic contacts deposited on them.

	Low EMI noise Techniques of the 6th Generation IGBT module By IGARASHI Seiki	[View] [Download]
Abstract: This paper describes the mechanism of radiation EMI noise coming from power electronics and introduces the applied technology of Fuji 6th generation IGBT modules, which have drastically improved the trade-off of radiation EMI noise and power dissipation loss. The application of new packaging technology has achieved a reduction in radiation noise of about -5dB by reducing the radiation noise loop area. New trench gate IGBTs have achieved a reduction in the radiation noise without significantly increasing switching losses. As a result, the total radiation noise is reduced by -15 dB with the same dissipation losses compared to the conventional IGBT.

	Preliminary experimental evaluation on PT-IGBT in parallel connection By SELGI Lorenzo ; FRAGAPANE Leonardo; MELITO Maurizio; SORRENTINO Giuseppe	[View] [Download]
Abstract: This paper presents the problems associated with the parallel connection of Punch Through IGBTs, such as: thermal stability and current balance. An experimental investigation is conducted in the simplest case of two IGBT working in hard switching on an inductive load; a thermal analysis was performed by means of an infrared camera.

	Study on advanced power device performance under real circuit conditions with an exact power loss simulator By OHASHI Hiromichi; HARADA Shinsuke; TAKAO Kazuto; HAYASHI Yusuke	[View] [Download]
Abstract: Power losses of 700V 2.7mohmcm2 SiC-MOSFETs including influences of circuit stray inductances have been investigated with an originally developed circuit power loss simulator. The device parameters of the SiC-MOSFETs for the power loss calculation are extracted from a SiC-IEMOSFET fabricated at AIST PERC. The power losses of three types of chip areas are investigated and compared to power loss of a CoolMOS. The switching loss energies of the SiC-MOSFETs are larger than that of the CoolMOS in the same circuit conditions. The maximum switching frequencies of the SiC-MOSFETs are 1/2 ~ 2/3 times lower than that of the CoolMOS. Based on total circuit power loss calculation results, heatsink volumes for a half bridge type DC-DC converter at 200kHz operation are estimated. In the case of the SiC-MOSFET3(smallest chip size)/SiC-SBD pair, the heatsink volume can be reduced to about 45\% compared to the CoolMOS/SiC-SBD pair due to the Tj=200˚C operation and the lower circuit power loss.

	VHDL-AMS model of IGBT for electro-thermal simulation By IBRAHIM Their; MRAD Sabrine; ALLARD Bruno; MOREL HervÃ©	[View] [Download]
Abstract: Many IGBT models have been published but none using VHDL-AMS language. The paper objective is to detail the electro-thermal simulation of IGBT and the coupling between electrical and thermal models using VHDL-AMS as a simulation language. This technique uses an electric circuit simulator and is based on a power IGBT model with temperature-dependent characteristics. Particular attention will be given to the extraction of model parameters. A novel electro-thermal coupling simulation is proposed. The simulation results using electrical and electro-thermal model show good agreements with measurement results. The compact thermal model is validated by a comparison to measured temperature transient responses.