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600V SOI Gate Driver IC with Advanced Level Shifter Concepts for Medium and High Power Applications
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| Author(s) |
HERZER Reinhard; ROSSBERG Matthias; VOGLER Bastian |
| Abstract |
An advanced level shifter topology allows any desired reference voltage drop between the primary side and the secondary sides of a high voltage IC (HVIC), including negative voltages caused by parasitic elements. This makes the HVICs suitable for medium and high power applications. For integration into latch-up free SOI technology the advanced level shifter topology is preferable. The capabilities of the level shifters are demonstrated in an experimental 7-channel 600V gate driver IC. It is demonstrated that the circuit remains operational for negative reference voltages down to -45V (bottom channel) and -20V (top channel) respectively. |
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| Filename: | 0440-epe2007-full-15375768.pdf |
| Filesize: | 506.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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