| Abstract |
This paper presents a physics-based power diode model with parameters established through an extraction procedure validated experimentally. The core of the model is based on a Finite Element approach that solves for electron/hole concentration in low doped zone of the device. As physical based models need a significant number of parameters an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters, needed for physics-based semiconductor models, requiring some simple device waveform measurements. Implementation of developed power diode model, in SPICE like simulators, and extraction procedure is presented. Experimental validation is performed. |
