| |
Design approach of newly developed 3.3kV IGBT modules
| [View]
[Download]
|
| Author(s) |
IURA Shinichi; THAL Eckhard; DONLON John |
| Abstract |
High Voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3kV level, a new IGBT and Free wheeling Diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi Method experiments to find the most influential design factors and to secure the most robust design. 3.3kV IGBT modules are used in high power inverter applications where low loss and fault tolerance are key considerations. For the IGBT chip this means low on-state conduction loss without sacrifice of switching and short circuit Safe Operating Area (SOA). For the FWD chip this means strong forward surge current and I2t capability. Simulation and experimental investigation were combined to develop new IGBT and FWD chips that meet these requirements for a more robust 3.3kV IGBT module. |
| Download |
| Filename: | 0245-epe2007-full-18190693.pdf |
| Filesize: | 319.2 KB |
|
| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
| |
 |