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Low EMI noise Techniques of the 6th Generation IGBT module
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| Author(s) |
IGARASHI Seiki |
| Abstract |
This paper describes the mechanism of radiation EMI noise coming from power electronics and introduces the applied technology of Fuji 6th generation IGBT modules, which have drastically improved the trade-off of radiation EMI noise and power dissipation loss. The application of new packaging technology has achieved a reduction in radiation noise of about -5dB by reducing the radiation noise loop area. New trench gate IGBTs have achieved a reduction in the radiation noise without significantly increasing switching losses. As a result, the total radiation noise is reduced by -15 dB with the same dissipation losses compared to the conventional IGBT. |
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| Filename: | 0274-epe2007-full-09585507.pdf |
| Filesize: | 1.163 MB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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