EPE Association: EPE 2005 - Topic 01-5b - DS: Silicon Power Diode and Thyristor Devices, Monolithic or Hybrid Integrated Silicon Devices, Other Power Semiconductor Devices

EPE 2005 - Topic 01-5b - DS: Silicon Power Diode and Thyristor Devices, Monolithic or Hybrid Integrated Silicon Devices, Other Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5b - DS: Silicon Power Diode and Thyristor Devices, Monolithic or Hybrid Integrated Silicon Devices, Other Power Semiconductor Devices

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   300°C operating junction temperature inverter leg investigations
By BERGOGNE Dominique ; PLANSON Dominique; MOREL Herve; BREVET Olivier; MRAD Sabrine; ALLARD Bruno; BEVILACQUA Pascal [View]
[Download]

Abstract: A Silicon Carbide JFET cascode sample is characterized at temperatures up to 300C with the design of a diode-less inverter in mind. The JFET is considered as a power switch, On-Off Gate voltages are applied during testing, conduction capability and blocking are measured, reverse conduction is investigated experimentally. Switching losses are considered and total losses of the inverter leg are estimated.

   A New Robust Power MOSFET Family in the Voltage Range 80V-150V with Superior Low RDSon, Excellent Switching Properties and Improved Body Diode
By HILLER Uli; ROeSCH Maximilian; SCHLOeGL Andreas; SOUF; HIRLER Franz; SIEMIENIEC Ralf; ROPOHL Jan [View]
[Download]

Abstract: A new 100-V power MOSFET of the OPTIMOS®2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR, resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control.

   A simple, low cost gate drive method for practical use of SiC JFETs in SMPS
By HOFSAJER Ivan; MELKONYAN Ashot [View]
[Download]

Abstract: The silicon carbide JFET has many promising advantages over silicon. However it requires a more complicated gate drive than conventional MOSFETs. In this paper a simple and effective method of driving the new devices with existing monolithic gate drive circuits is proposed. The basis of the proposed method lies in applying a constant negative DC bias to the gate in order to minimize the required voltage swing on the gate to enable switching to take place. The method is supported with experimental data and proves to be effective. The negative gate bias does however lead to additional losses and derating of the device is required. The derating data for a constant power loss is given as well.

   Analysis of Premature Breakdown in High-power Devices using IBIC Microscopy
By BALK Ludwig; OSIPOWICZ Thomas; KHAMBADKONE Ashwin; PHANG Jacob; PUGATSCHOW Anton; WATT Frank; SCHULZE Han; NIEDERNOSTHEIDE Fran; ZMECK Markus [View]
[Download]

Abstract: Ion Beam Induced Charge (IBIC) microscopy is used mainly for analysis of various semiconductor parameters such as diffusion length and lifetime of the charge carriers. In this paper, we show that IBIC microscopy is also useful for the visualization of the electrical field distribution within depletion regions of electronic devices. The ions penetrating into the semiconductor generate electron-hole pairs that are separated and accelerated depending on the internal electric field distribution. The shape of the resulting current induced in this way is dependent on the electric field. This dependence and the large penetration depth of the light ions allow the analysis of electric field distributions within semiconductor devices up to a few tens of microns below the device surface. Therefore, IBIC microscopy is a very useful analytical tool for the characterization of the electrical field distribution within high-power devices, even when the semiconductor is covered with thick passivation or metallization layers.

   Bipolar 6,5 kV-SiC-Diodes: On the Road to Industrial Application
By KOERBER Klaus; BARTSCH Wolfgang; ELPELT Rudolf; SCHOERNER Reinhold; DOHNKE Karl Otto; BLOECHER Bernd [View]
[Download]

Abstract: This work presents the transient behaviour of paralleled 6.5 kV bipolar SiC diodes with Aluminium implanted emitters. The switching behaviour at a current level of 30 A is shown at DC link voltages uo to 4 kV and at a junction temperature of 125°C. Different IGBT gate resistor conditions realise different rates of current decay up to 1000 A/µs. Experimental results are discussed in terms of snappiness.

   ESBT (TM) in industrial PFC topologies
By SAYA Francesco [View]
[Download]

Abstract: ESBT®, standing for Emitter Switched Bipolar Transistor, represents a new family of power actuators based on emitter switching topology recently introduced in the market place as both monolithic or co-packaged (hybrid) solution suitable for high voltage high switching frequency applications. Advantages and fast switching peculiarities of the emitter-switching topology are briefly treated, as well as a short description of the single-chip solution achieved through the integration of a Power MOSFET inside the emitter fingers of a Power Bipolar Transistor. Limits of traditional base current driving circuits suitable for cascode configuration are shown. In fact they are more efficient in applications with collector current nearly constant, showing significant drawbacks in applications, such as PFCs, where large variations of collector current are involved.An innovative proportional base driving circuit based on the storage time control is presented, thus ensuring an adequate saturation level in on condition and optimizing the switching losses in all load conditions. The new driver is suitable for an integrated solution. A driver prototype has been proved in the most popular converters, widely used in industrial PFC applications, with a new 1200V/8A monolithic ESBTTM, highlighting the benefits of using very high voltage fast switching transistors

   Experimental Determination of Lifetime Engineering effects on Power Diodes using an IIR-LD set-up
By VELLVEHI Miquel; MESTRES NarciS; JORDA Xavier; VOBECKY Jan; MILLAN Jose; PERPINYA Xavier [View]
[Download]

Abstract: The effects of lifetime engineering processes in fast recovery power diodes are measured by using an internal IR-laser deflection (IIR-LD) set-up. To evidence the local lifetime killing effects on such devices, a comparison between the measured physical parameters of irradiated and unirradiated diodes, free-carrier concentration and their decay time, is performed. A reduction of free-carrier concentration profile and local lifetime is observed in the region of the ion penetration range. Furthermore, even at low fluences, ion irradiation impact on the free-carrier concentration has been measured. The measured free-carrier concentrations are corroborated by simulation results, obtaining good qualitative agreement.

   Fast Recovery Diode with Local Lifetime Control Using High-Energy Platinum and Helium Implantation
By HAZDRA Pavel; VOBECKY Jan [View]
[Download]

Abstract: 2.5kV/150A PiN diode is subjected to the local lifetime control using platinum diffusion from implanted layer (Pt6 : energy 19MeV, dose 51012 cm-2). The diffusion is controlled by radiation defects resulting from helium implantation (He2 : energy 10 MeV, dose 11012 cm-2). This process is proved to locally control excess carrier lifetime at the same level as that of platinum diffusion from PtSi anode contact. The electrical characteristics (DLTS, forward and reverse I-V, OCVD, reverse recovery) are presented. Reverse recovery waveforms up to the dc line voltage of 2kV of the novel devices are compared with those of standard helium and combined helium-electron implantation. The novel technique gives lower leakage current, similar forward voltage drop and charge from dynamic avalanche.

   Latch-up free 600V SOI Gate Driver IC for Medium Power and High Temperature Applications
By PAWEL Sascha; HERZER Reinhard; ROSSBERG Matthias [View]
[Download]

Abstract: The design, functionality and measurements of fully integrated 600V SOI gate drive IC’s are presented. The two-, six- and seven- channel HVIC target different motor drive systems for low power and medium power applications. Dielectric device isolation and the detailed circuit design ensure operation up to a temperature of 200°C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC’s are given.

   New Extra Fast Soft Recovery Diodes and Their Applications
By GOLLAND Ashley; LIU Z. Q; WAKEMAN Frank; LI Gangru [View]
[Download]

Abstract: A new range of 1.7kV, 2.5kV and 4.5kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt >5000A/µs and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive VF temperature coefficient at rated current level, which is advantageous for parallel applications.

   SiC power bipolar junction transistors - Modeling and improvement of the current gain
By SCHOeNER Adolf; OeSTLING Mikael; ZETTERLING Car; LEE Hyun; DOMEIJ Martin [View]
[Download]

Abstract: Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial growth. Device simulations of the current gain as function of collector current have been compared with measurements. The measurements show a clear emitter-size effect that is in good agreement with simulations including surface recombination in interface states at the etched termination of the base-emitter junction. Simulations indicate an optimum emitter doping around 1e19 cm-3 in agreement with typical state-of-the-art BJTs.

   Switching ruggedness of high-power diodes
By PFAFFENLEHNER Manfred; NIEDERNOSTHEIDE Fran; SCHULZE Han; SCHMIDT Gerhard; FALCK Elmar [View]
[Download]

Abstract: The ruggedness of high-power diodes is an important quality feature in fast-switching processes from the conducting to the blocking state. In this paper, diodes with three different types of junction terminations are analyzed in detail by numerical simulations. Furthermore, the influence of positive charges in the dielectric layer covering the junction termination, and the local reduction of the charge carrier lifetime on diode ruggedness is investigated.

   THE DIAMOND FOR POWER ELECTRONIC DEVICES
By SCHNEIDER Henri [View]
[Download]

Abstract: Diamond has the most interesting and extreme thermal, dielectric and electronic properties of semiconductors. The benefits of using diamond for power electronic switch can be illustrated by a new figure of merit.The exploration of possible device applications for this material has been motivated by the significant advances in growth and electronic technologies of diamond.Our studies are focused on two specific problems of power electronic: thermal management and high voltage switching. Indeed, diamond exhibits a unique combination of the highest electric breakdown field and thermal conduction that make it a potential candidate for power electronic packaging. Moreover, recent improvements in single crystal diamond growth have resulted in films with very high carrier mobility and high electric breakdown field that present a new interest for high power switches.

EPE 2005 - Topic 01-5b - DS: Silicon Power Diode and Thyristor Devices, Monolithic or Hybrid Integrated Silicon Devices, Other Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5b - DS: Silicon Power Diode and Thyristor Devices, Monolithic or Hybrid Integrated Silicon Devices, Other Power Semiconductor Devices
	[return to parent folder]

	300°C operating junction temperature inverter leg investigations By BERGOGNE Dominique ; PLANSON Dominique; MOREL Herve; BREVET Olivier; MRAD Sabrine; ALLARD Bruno; BEVILACQUA Pascal	[View] [Download]
Abstract: A Silicon Carbide JFET cascode sample is characterized at temperatures up to 300C with the design of a diode-less inverter in mind. The JFET is considered as a power switch, On-Off Gate voltages are applied during testing, conduction capability and blocking are measured, reverse conduction is investigated experimentally. Switching losses are considered and total losses of the inverter leg are estimated.

	A New Robust Power MOSFET Family in the Voltage Range 80V-150V with Superior Low RDSon, Excellent Switching Properties and Improved Body Diode By HILLER Uli; ROeSCH Maximilian; SCHLOeGL Andreas; SOUF; HIRLER Franz; SIEMIENIEC Ralf; ROPOHL Jan	[View] [Download]
Abstract: A new 100-V power MOSFET of the OPTIMOS®2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR, resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control.

	A simple, low cost gate drive method for practical use of SiC JFETs in SMPS By HOFSAJER Ivan; MELKONYAN Ashot	[View] [Download]
Abstract: The silicon carbide JFET has many promising advantages over silicon. However it requires a more complicated gate drive than conventional MOSFETs. In this paper a simple and effective method of driving the new devices with existing monolithic gate drive circuits is proposed. The basis of the proposed method lies in applying a constant negative DC bias to the gate in order to minimize the required voltage swing on the gate to enable switching to take place. The method is supported with experimental data and proves to be effective. The negative gate bias does however lead to additional losses and derating of the device is required. The derating data for a constant power loss is given as well.

	Analysis of Premature Breakdown in High-power Devices using IBIC Microscopy By BALK Ludwig; OSIPOWICZ Thomas; KHAMBADKONE Ashwin; PHANG Jacob; PUGATSCHOW Anton; WATT Frank; SCHULZE Han; NIEDERNOSTHEIDE Fran; ZMECK Markus	[View] [Download]
Abstract: Ion Beam Induced Charge (IBIC) microscopy is used mainly for analysis of various semiconductor parameters such as diffusion length and lifetime of the charge carriers. In this paper, we show that IBIC microscopy is also useful for the visualization of the electrical field distribution within depletion regions of electronic devices. The ions penetrating into the semiconductor generate electron-hole pairs that are separated and accelerated depending on the internal electric field distribution. The shape of the resulting current induced in this way is dependent on the electric field. This dependence and the large penetration depth of the light ions allow the analysis of electric field distributions within semiconductor devices up to a few tens of microns below the device surface. Therefore, IBIC microscopy is a very useful analytical tool for the characterization of the electrical field distribution within high-power devices, even when the semiconductor is covered with thick passivation or metallization layers.

	Bipolar 6,5 kV-SiC-Diodes: On the Road to Industrial Application By KOERBER Klaus; BARTSCH Wolfgang; ELPELT Rudolf; SCHOERNER Reinhold; DOHNKE Karl Otto; BLOECHER Bernd	[View] [Download]
Abstract: This work presents the transient behaviour of paralleled 6.5 kV bipolar SiC diodes with Aluminium implanted emitters. The switching behaviour at a current level of 30 A is shown at DC link voltages uo to 4 kV and at a junction temperature of 125°C. Different IGBT gate resistor conditions realise different rates of current decay up to 1000 A/µs. Experimental results are discussed in terms of snappiness.

	ESBT (TM) in industrial PFC topologies By SAYA Francesco	[View] [Download]
Abstract: ESBT®, standing for Emitter Switched Bipolar Transistor, represents a new family of power actuators based on emitter switching topology recently introduced in the market place as both monolithic or co-packaged (hybrid) solution suitable for high voltage high switching frequency applications. Advantages and fast switching peculiarities of the emitter-switching topology are briefly treated, as well as a short description of the single-chip solution achieved through the integration of a Power MOSFET inside the emitter fingers of a Power Bipolar Transistor. Limits of traditional base current driving circuits suitable for cascode configuration are shown. In fact they are more efficient in applications with collector current nearly constant, showing significant drawbacks in applications, such as PFCs, where large variations of collector current are involved.An innovative proportional base driving circuit based on the storage time control is presented, thus ensuring an adequate saturation level in on condition and optimizing the switching losses in all load conditions. The new driver is suitable for an integrated solution. A driver prototype has been proved in the most popular converters, widely used in industrial PFC applications, with a new 1200V/8A monolithic ESBTTM, highlighting the benefits of using very high voltage fast switching transistors

	Experimental Determination of Lifetime Engineering effects on Power Diodes using an IIR-LD set-up By VELLVEHI Miquel; MESTRES NarciS; JORDA Xavier; VOBECKY Jan; MILLAN Jose; PERPINYA Xavier	[View] [Download]
Abstract: The effects of lifetime engineering processes in fast recovery power diodes are measured by using an internal IR-laser deflection (IIR-LD) set-up. To evidence the local lifetime killing effects on such devices, a comparison between the measured physical parameters of irradiated and unirradiated diodes, free-carrier concentration and their decay time, is performed. A reduction of free-carrier concentration profile and local lifetime is observed in the region of the ion penetration range. Furthermore, even at low fluences, ion irradiation impact on the free-carrier concentration has been measured. The measured free-carrier concentrations are corroborated by simulation results, obtaining good qualitative agreement.

	Fast Recovery Diode with Local Lifetime Control Using High-Energy Platinum and Helium Implantation By HAZDRA Pavel; VOBECKY Jan	[View] [Download]
Abstract: 2.5kV/150A PiN diode is subjected to the local lifetime control using platinum diffusion from implanted layer (Pt6 : energy 19MeV, dose 51012 cm-2). The diffusion is controlled by radiation defects resulting from helium implantation (He2 : energy 10 MeV, dose 11012 cm-2). This process is proved to locally control excess carrier lifetime at the same level as that of platinum diffusion from PtSi anode contact. The electrical characteristics (DLTS, forward and reverse I-V, OCVD, reverse recovery) are presented. Reverse recovery waveforms up to the dc line voltage of 2kV of the novel devices are compared with those of standard helium and combined helium-electron implantation. The novel technique gives lower leakage current, similar forward voltage drop and charge from dynamic avalanche.

	Latch-up free 600V SOI Gate Driver IC for Medium Power and High Temperature Applications By PAWEL Sascha; HERZER Reinhard; ROSSBERG Matthias	[View] [Download]
Abstract: The design, functionality and measurements of fully integrated 600V SOI gate drive IC’s are presented. The two-, six- and seven- channel HVIC target different motor drive systems for low power and medium power applications. Dielectric device isolation and the detailed circuit design ensure operation up to a temperature of 200°C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC’s are given.

	New Extra Fast Soft Recovery Diodes and Their Applications By GOLLAND Ashley; LIU Z. Q; WAKEMAN Frank; LI Gangru	[View] [Download]
Abstract: A new range of 1.7kV, 2.5kV and 4.5kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt >5000A/µs and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive VF temperature coefficient at rated current level, which is advantageous for parallel applications.

	SiC power bipolar junction transistors - Modeling and improvement of the current gain By SCHOeNER Adolf; OeSTLING Mikael; ZETTERLING Car; LEE Hyun; DOMEIJ Martin	[View] [Download]
Abstract: Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial growth. Device simulations of the current gain as function of collector current have been compared with measurements. The measurements show a clear emitter-size effect that is in good agreement with simulations including surface recombination in interface states at the etched termination of the base-emitter junction. Simulations indicate an optimum emitter doping around 1e19 cm-3 in agreement with typical state-of-the-art BJTs.

	Switching ruggedness of high-power diodes By PFAFFENLEHNER Manfred; NIEDERNOSTHEIDE Fran; SCHULZE Han; SCHMIDT Gerhard; FALCK Elmar	[View] [Download]
Abstract: The ruggedness of high-power diodes is an important quality feature in fast-switching processes from the conducting to the blocking state. In this paper, diodes with three different types of junction terminations are analyzed in detail by numerical simulations. Furthermore, the influence of positive charges in the dielectric layer covering the junction termination, and the local reduction of the charge carrier lifetime on diode ruggedness is investigated.

	THE DIAMOND FOR POWER ELECTRONIC DEVICES By SCHNEIDER Henri	[View] [Download]
Abstract: Diamond has the most interesting and extreme thermal, dielectric and electronic properties of semiconductors. The benefits of using diamond for power electronic switch can be illustrated by a new figure of merit.The exploration of possible device applications for this material has been motivated by the significant advances in growth and electronic technologies of diamond.Our studies are focused on two specific problems of power electronic: thermal management and high voltage switching. Indeed, diamond exhibits a unique combination of the highest electric breakdown field and thermal conduction that make it a potential candidate for power electronic packaging. Moreover, recent improvements in single crystal diamond growth have resulted in films with very high carrier mobility and high electric breakdown field that present a new interest for high power switches.