| Abstract |
2.5kV/150A PiN diode is subjected to the local lifetime control using platinum diffusion from implanted layer (Pt6 : energy 19MeV, dose 51012 cm-2). The diffusion is controlled by radiation defects resulting from helium implantation (He2 : energy 10 MeV, dose 11012 cm-2). This process is proved to locally control excess carrier lifetime at the same level as that of platinum diffusion from PtSi anode contact. The electrical characteristics (DLTS, forward and reverse I-V, OCVD, reverse recovery) are presented. Reverse recovery waveforms up to the dc line voltage of 2kV of the novel devices are compared with those of standard helium and combined helium-electron implantation. The novel technique gives lower leakage current, similar forward voltage drop and charge from dynamic avalanche. |
