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SiC power bipolar junction transistors - Modeling and improvement of the current gain
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| Author(s) |
SCHOeNER Adolf; OeSTLING Mikael; ZETTERLING Car; LEE Hyun; DOMEIJ Martin |
| Abstract |
Epitaxial silicon carbide bipolar junction transistors (BJTs) for power switching applications have been designed and fabricated with a maximum breakdown voltage of 1100 V. The BJTs have high common emitter current gains with maximum values exceeding 60, a result that is attributed to design optimization of the base and emitter layers and to a high material quality obtained by a continuous epitaxial growth. Device simulations of the current gain as function of collector current have been compared with measurements. The measurements show a clear emitter-size effect that is in good agreement with simulations including surface recombination in interface states at the etched termination of the base-emitter junction. Simulations indicate an optimum emitter doping around 1e19 cm-3 in agreement with typical state-of-the-art BJTs. |
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| Filename: | 0834 |
| Filesize: | 138.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-08 by System |
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