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Bipolar 6,5 kV-SiC-Diodes: On the Road to Industrial Application
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| Author(s) |
KOERBER Klaus; BARTSCH Wolfgang; ELPELT Rudolf; SCHOERNER Reinhold; DOHNKE Karl Otto; BLOECHER Bernd |
| Abstract |
This work presents the transient behaviour of paralleled 6.5 kV bipolar SiC diodes with Aluminium implanted emitters. The switching behaviour at a current level of 30 A is shown at DC link voltages uo to 4 kV and at a junction temperature of 125°C. Different IGBT gate resistor conditions realise different rates of current decay up to 1000 A/µs. Experimental results are discussed in terms of snappiness. |
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| Filename: | 0889 |
| Filesize: | 1.265 MB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-08 by System |
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