| Abstract |
A new range of 1.7kV, 2.5kV and 4.5kV extra fast soft recovery diodes that are optimised for use with press-pack IGBTs and GCTs are described. By using heavy metal diffusion and ion implantation for profiled lifetime control, an optimum trade-off in static and dynamic parameters can be achieved. The new diodes appear to be outstanding in their dynamic characteristics, such as very soft recovery, reverse recovery di/dt >5000A/µs and low reverse peak current. The new devices also have high maximum operating temperature, low blocking leakage and positive VF temperature coefficient at rated current level, which is advantageous for parallel applications. |
