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   A New Robust Power MOSFET Family in the Voltage Range 80V-150V with Superior Low RDSon, Excellent Switching Properties and Improved Body Diode   [View] 
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 Author(s)   HILLER Uli; ROeSCH Maximilian; SCHLOeGL Andreas; SOUF; HIRLER Franz; SIEMIENIEC Ralf; ROPOHL Jan 
 Abstract   A new 100-V power MOSFET of the OPTIMOSĀ®2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR, resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control. 
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Filename:0302
Filesize:605.2 KB
 Type   Members Only 
 Date   Last modified 2006-02-08 by System