EPE Association: EPE-PEMC 2000 - Topic 02b: Device Characteristics and Applications

EPE-PEMC 2000 - Topic 02b: Device Characteristics and Applications
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2000 - Conference > EPE-PEMC 2000 - Topic 02: Semiconductor Devices > EPE-PEMC 2000 - Topic 02b: Device Characteristics and Applications

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   A New Fabrication Technique of Trench DMOSFETs Employing Oxide Spacers and Self-Align Technique for DC-DC Converter Applications
By Kim J., Lee S.Y.*, Kim S.G., Nam K.S., Mun S.J., Koo J.G., Cho K.I. [View]
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Abstract: A new process technology for fabricating high-density and low on-resistance trench MOSFETs with oxide spacers and self-align technique is realized. This technique reduces the process step, trench width, and source and p-body region with a resulting increase in cell density and current driving capability, and decrease in on-resistance as well as cost-effective production capability. Specific on-resistance of 0.41mW.cm2 with a blocking voltage of 43 is obtained.

   Analytical Modelling of 6H-SiC PiN Diode for Circuit Simulation
By Wang J., Sankara Narayanan E.M., De Souza M.M., Williams B.W.* [View]
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Abstract: In this paper, two 6H-SiC analytical high voltage PiN diode models are derived, implemented and validated in PSpice. These models take into account the impact of temperature and doping on carrier mobility, lifetime and junction built-in voltage, and the effects of emitter doping on injection efficiency. Being physics based, the model parameters can be calculated from material and device structure parameters. Compared with numerical simulation results, both non quasi-static models predict the diode reverse recovery characteristics accurately. The nature of these models and challenges facing SiC device modeling are discussed briefly.

   Experimental Investigations on the Switching Performances of 1200V Conventional PT-IGBT and New PT-IGBT Using Local Lifetime Control for Clamped Inductive Load
By Azzopardi S., Kawamura A., Iwamoto H.* [View]
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Abstract: This paper proposes an analysis of the performances for clamped inductive switching without any freewheeling diode reverse recovery influence of 1200V conventional planar Punch-Through and new planar Punch-Through which uses a local lifetime control. Measurements have been done for various temperature, collector current, gate resistance and clamping voltage values. The new planar device allows to achieve and enhance the switching performances of the punch-through structure and to keep the high ruggedness of the non punch-through structure. The results show that generally the performances of both devices are similar but when the temperature rises, the new IGBT exhibits better performances than the conventional device during switching mode. The new lifetime control using proton irradiation applied to the n+ buffer layer, less sensitive to temperature than the electron irradiation process, allows to control more efficiently the storage charges and to keep the lifetime relatively constant. Compared to the conventional device, the turn-off losses are lower due the low increase of the magnitude of the bipolar part of the current tail especially at high temperature, even if the MOS part of the current tail is longer in time.

   High Power Semiconductor Device Thermal Stresses during Short-Circuit States
By Zymmer K., Sakowicz S., Januszewski S. [View]
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Abstract: Over-current capabilities of semiconductor devices declared in data sheets are not sufficient for choosing these devices to be used in high power converters. In real short-circuit conditions peak values of current pulses are variable during the whole over-current cycle and their duration times are longer than 10 ms (50 Hz). Estimation methods of converter short-circuit currents are discussed. Failure mechanisms of power semiconductor devices caused by overtemperature or reverse voltage are presented. Some examples of device temperature calculations are given. Choice methods of diodes and thyristors for high power converters taking into account short-circuit conditions are presented.

EPE-PEMC 2000 - Topic 02b: Device Characteristics and Applications
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2000 - Conference > EPE-PEMC 2000 - Topic 02: Semiconductor Devices > EPE-PEMC 2000 - Topic 02b: Device Characteristics and Applications
	[return to parent folder]

	A New Fabrication Technique of Trench DMOSFETs Employing Oxide Spacers and Self-Align Technique for DC-DC Converter Applications By Kim J., Lee S.Y., Kim S.G., Nam K.S., Mun S.J., Koo J.G., Cho K.I.*	[View] [Download]
Abstract: A new process technology for fabricating high-density and low on-resistance trench MOSFETs with oxide spacers and self-align technique is realized. This technique reduces the process step, trench width, and source and p-body region with a resulting increase in cell density and current driving capability, and decrease in on-resistance as well as cost-effective production capability. Specific on-resistance of 0.41mW.cm2 with a blocking voltage of 43 is obtained.

	Analytical Modelling of 6H-SiC PiN Diode for Circuit Simulation By Wang J., Sankara Narayanan E.M., De Souza M.M., Williams B.W.*	[View] [Download]
Abstract: In this paper, two 6H-SiC analytical high voltage PiN diode models are derived, implemented and validated in PSpice. These models take into account the impact of temperature and doping on carrier mobility, lifetime and junction built-in voltage, and the effects of emitter doping on injection efficiency. Being physics based, the model parameters can be calculated from material and device structure parameters. Compared with numerical simulation results, both non quasi-static models predict the diode reverse recovery characteristics accurately. The nature of these models and challenges facing SiC device modeling are discussed briefly.

	Experimental Investigations on the Switching Performances of 1200V Conventional PT-IGBT and New PT-IGBT Using Local Lifetime Control for Clamped Inductive Load By Azzopardi S., Kawamura A., Iwamoto H.*	[View] [Download]
Abstract: This paper proposes an analysis of the performances for clamped inductive switching without any freewheeling diode reverse recovery influence of 1200V conventional planar Punch-Through and new planar Punch-Through which uses a local lifetime control. Measurements have been done for various temperature, collector current, gate resistance and clamping voltage values. The new planar device allows to achieve and enhance the switching performances of the punch-through structure and to keep the high ruggedness of the non punch-through structure. The results show that generally the performances of both devices are similar but when the temperature rises, the new IGBT exhibits better performances than the conventional device during switching mode. The new lifetime control using proton irradiation applied to the n+ buffer layer, less sensitive to temperature than the electron irradiation process, allows to control more efficiently the storage charges and to keep the lifetime relatively constant. Compared to the conventional device, the turn-off losses are lower due the low increase of the magnitude of the bipolar part of the current tail especially at high temperature, even if the MOS part of the current tail is longer in time.

	High Power Semiconductor Device Thermal Stresses during Short-Circuit States By Zymmer K., Sakowicz S., Januszewski S.	[View] [Download]
Abstract: Over-current capabilities of semiconductor devices declared in data sheets are not sufficient for choosing these devices to be used in high power converters. In real short-circuit conditions peak values of current pulses are variable during the whole over-current cycle and their duration times are longer than 10 ms (50 Hz). Estimation methods of converter short-circuit currents are discussed. Failure mechanisms of power semiconductor devices caused by overtemperature or reverse voltage are presented. Some examples of device temperature calculations are given. Choice methods of diodes and thyristors for high power converters taking into account short-circuit conditions are presented.