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High Power Semiconductor Device Thermal Stresses during Short-Circuit States
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| Author(s) |
Zymmer K., Sakowicz S., Januszewski S. |
| Abstract |
Over-current capabilities of semiconductor devices declared in data sheets are not sufficient for choosing these devices to be used in high power converters. In real short-circuit conditions peak values of current pulses are variable during the whole over-current cycle and their duration times are longer than 10 ms (50 Hz). Estimation methods of converter short-circuit currents are discussed. Failure mechanisms of power semiconductor devices caused by overtemperature or reverse voltage are presented. Some examples of device temperature calculations are given. Choice methods of diodes and thyristors for high power converters taking into account short-circuit conditions are presented. |
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| Filename: | EPE-PEMC2000 - 059 - Zymmer.pdf |
| Filesize: | 1.336 MB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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