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Analytical Modelling of 6H-SiC PiN Diode for Circuit Simulation
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| Author(s) |
Wang J., Sankara Narayanan E.M., De Souza M.M., Williams B.W.* |
| Abstract |
In this paper, two 6H-SiC analytical high voltage PiN diode models are derived, implemented and validated in PSpice. These models take into account the impact of temperature and doping on carrier mobility, lifetime and junction built-in voltage, and the effects of emitter doping on injection efficiency. Being physics based, the model parameters can be calculated from material and device structure parameters. Compared with numerical simulation results, both non quasi-static models predict the diode reverse recovery characteristics accurately. The nature of these models and challenges facing SiC device modeling are discussed briefly. |
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| Filename: | EPE-PEMC2000 - 244 - Wang.pdf |
| Filesize: | 324.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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