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Experimental Investigations on the Switching Performances of 1200V Conventional PT-IGBT and New PT-IGBT Using Local Lifetime Control for Clamped Inductive Load
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| Author(s) |
Azzopardi S., Kawamura A., Iwamoto H.* |
| Abstract |
This paper proposes an analysis of the performances for clamped inductive switching without any freewheeling diode reverse recovery influence of 1200V conventional planar Punch-Through and new planar Punch-Through which uses a local lifetime control. Measurements have been done for various temperature, collector current, gate resistance and clamping voltage values. The new planar device allows to achieve and enhance the switching performances of the punch-through structure and to keep the high ruggedness of the non punch-through structure. The results show that generally the performances of both devices are similar but when the temperature rises, the new IGBT exhibits better performances than the conventional device during switching mode. The new lifetime control using proton irradiation applied to the n+ buffer layer, less sensitive to temperature than the electron irradiation process, allows to control more efficiently the storage charges and to keep the lifetime relatively constant. Compared to the conventional device, the turn-off losses are lower due the low increase of the magnitude of the bipolar part of the current tail especially at high temperature, even if the MOS part of the current tail is longer in time. |
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| Filename: | EPE-PEMC2000 - 313 - Azzopardi.pdf |
| Filesize: | 1018 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-04-28 by System |
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