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A Compact Model for Depletion MOSFETs in Smart Power Applications
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Author(s) |
L. Goehler; K. Kelting |
Abstract |
This paper presents a compact depletion MOSFET (DMOSFET) model primary applicable in smart power circuit simulations. For the first time, a complete description of all internal states and the stored charge in both on - state and subthreshold operation of a DMOSFET is given. Despite these advantages the equation set requires 25 parameters only. |
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Filename: | EPE1999 - PP00011 - Goehler.pdf |
Filesize: | 169.1 KB |
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Type |
Members Only |
Date |
Last modified 2004-03-29 by System |
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