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   A Compact Model for Depletion MOSFETs in Smart Power Applications   [View] 
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 Author(s)   L. Goehler; K. Kelting 
 Abstract   This paper presents a compact depletion MOSFET (DMOSFET) model primary applicable in smart power circuit simulations. For the first time, a complete description of all internal states and the stored charge in both on - state and subthreshold operation of a DMOSFET is given. Despite these advantages the equation set requires 25 parameters only. 
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Filename:EPE1999 - PP00011 - Goehler.pdf
Filesize:169.1 KB
 Type   Members Only 
 Date   Last modified 2004-03-29 by System