| Abstract |
A new physical based power PIN diode SPICE macromodel was developed by using the "in-line equation" non-linear controlled sources implemented in the new generation of SPICE simulators, to model the device internal electrical and thermal equations. The solutions of both the ambipolar diffusion equation and the heat flow equation were modelled in the Laplace domain by a direct implementation of their non-rational expressions. Thus a better simulation accuracy is achieved by considering the distributed character of both the electrical and thermal processes. This new SPICE macromodel precisely describes the forward and reverse recoveries, the conductivity modulation of the base resistance, the emitter recombination effects and the device self-heating process. The proposed behavioural SPICE macromodel is portable in all the modern SPICE like simulators that support the ABM facilities, and it contains only low level SPICE devices and thus leads to a high computational efficiency, with no convergence problems. |
