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Accurate Modeling of Commutation Cell for Loss Calculation and EMC Performance Prediction in Power Converters
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Author(s) |
M. Akhbari; J. L. Schanen; P. Leturcq; M. O. Berraies |
Abstract |
Determination of switching losses and EMC (Electromagnetic Compatibility)
performance of power converters requires such a degree of accuracy in modelling that can not be
obtained by usual models existing in general purpose circuit simulators like PSpice. In this paper, a
precise model for commutation cell is presented. For power PIN diode, a distributed model adapted in
the form of state space model is presented. This model describes the dynamics of charges in the
middle zone of power PIN diode. An accurate behavioural model for power MOSFET is elaborated
and the parasitic elements (stray inductances) of structure are calculated by a PEEC (Partial Element
Equivalent Circuit) method based software. Simulation and experimental results are compared. The
results show the robustness of the model against the variation of operating conditions. |
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Filename: | EPE1999 - PP00590 - Akhbari.pdf |
Filesize: | 391.1 KB |
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Type |
Members Only |
Date |
Last modified 2004-03-29 by System |
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