EPE Association: EPE 2001 - Topic 01b: Power Semiconductor Devices

EPE 2001 - Topic 01b: Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01b: Power Semiconductor Devices

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   A 4.5kV-HVIGBT Module Family with Low VCE(sat)
By H. Iwamoto; K. Mochizuki; K. Ishii; I. Merfert [View]
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Abstract: A new family of 4.5kV IGBTs is presented. The relationship between n– layer thickness and blocking voltage is analyzed with the intention of minimizing the collector-emitter saturation voltage VCE(sat). The collector and buffer concentrations and the position of the lifetime control region have been optimized aiming at a reduction of the hot leakage current. The result is an IGBT structure that has a lower VCE(sat) than an equivalent 3.3kV IGBT.

   A New Protection Circuit for 4.5kV Current Sense IEGT
By H. Tai; M. Kitagawa [View]
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Abstract: This paper presents a new type of short-circuit protection circuit for current sense IGBT. Proposed protection circuit has three stages structure that enables precise current sensing and stable current limit operation. An evaluation was made using 4.5kV current sense press pack IEGT and the experimental results show good performance of this combination.

   Achievement of a new peripheral planar structure ...
By O. Causse; P. Austin; J.L. Sanchez; G. Bonnet; E. Scheid [View]
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Abstract: Two new peripheral planar structures of junction termination type allowing symmetrical blocking voltage are presented. The first one is considered like an ideal structure, but requires a specific packaging. The second one is well suited for classical packaging using brazing. Two technological solutions to realise insulated P+ vertical walls implemented into these new peripheral structures are also presented: the thermomigration of aluminium in silicon and deep trenches filled with highly boron doped polysilicon.

   Charge compensated MOSFET - How close to the ideal power switch?
By M. Puerschel; A. Riedlhammer; I. Zverev [View]
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Abstract: Theoretical properties of an ideal power switch such as power losses and noise generation (EMI) are discussed. Each of these properties, their interdependence and trade off are described. The principle of compensation will be explained and correspondence between charge compensated MOSFET (Cool- MOS) and theoretical ideal power switch are discussed.

   Comparison of the swithing characteristics of high-voltage ECT....
By S. V. Rybin; A. M. Surma; E. A. Ladygin [View]
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Abstract: The ECT - Emitter Commutated Thyristor - is hard drive GTO, controlled by switching a low-voltage key in a cathode circuit. The experimental 6000V ECTs were made with application of two technologies of carrier lifetime control - irradiation by protons or electrons. The turn-on and turn-off characteristics of these devices are investigated.

   Edge Terminations For 6.5Kv Igbts
By M. Vellvehi; D. Flores; S. Hidalgo; J. Rebollo; J. Millán; L. Coulbeck; P. Waind; D. Newcombe [View]
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Abstract: This paper is addressed to the design and optimisation of Junction Termination Extension and Floating Guard Rings edge termination structures to integrate 6.5 kV IGBT devices. The developed edge termination structures are extensively analysed through numerical simulations, and experimental data on fabricated diode structures are correlated with simulation results showing the feasibility of the proposed techniques.

   Optimized diode design for IGBT´s and GCT´s switching circuits.
By M. Portesine; F. Fasce; P. Pampili; P. Cova; R. Menozzi; B. Cascone; L. Fratelli; G. Botto [View]
[Download]

Abstract: In a modern power converter, the high performance of semiconductor switches, like IGBT’s and GCT's, imposes hard turn-off to diodes, with fast current gradients resulting in undesirable and dangerous overvoltages. A new family of optimized diodes has been developed as well as a new test circuit able to evaluate the diode behavior under real operation conditions.

EPE 2001 - Topic 01b: Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01b: Power Semiconductor Devices
	[return to parent folder]

	A 4.5kV-HVIGBT Module Family with Low VCE(sat) By H. Iwamoto; K. Mochizuki; K. Ishii; I. Merfert	[View] [Download]
Abstract: A new family of 4.5kV IGBTs is presented. The relationship between n– layer thickness and blocking voltage is analyzed with the intention of minimizing the collector-emitter saturation voltage VCE(sat). The collector and buffer concentrations and the position of the lifetime control region have been optimized aiming at a reduction of the hot leakage current. The result is an IGBT structure that has a lower VCE(sat) than an equivalent 3.3kV IGBT.

	A New Protection Circuit for 4.5kV Current Sense IEGT By H. Tai; M. Kitagawa	[View] [Download]
Abstract: This paper presents a new type of short-circuit protection circuit for current sense IGBT. Proposed protection circuit has three stages structure that enables precise current sensing and stable current limit operation. An evaluation was made using 4.5kV current sense press pack IEGT and the experimental results show good performance of this combination.

	Achievement of a new peripheral planar structure ... By O. Causse; P. Austin; J.L. Sanchez; G. Bonnet; E. Scheid	[View] [Download]
Abstract: Two new peripheral planar structures of junction termination type allowing symmetrical blocking voltage are presented. The first one is considered like an ideal structure, but requires a specific packaging. The second one is well suited for classical packaging using brazing. Two technological solutions to realise insulated P+ vertical walls implemented into these new peripheral structures are also presented: the thermomigration of aluminium in silicon and deep trenches filled with highly boron doped polysilicon.

	Charge compensated MOSFET - How close to the ideal power switch? By M. Puerschel; A. Riedlhammer; I. Zverev	[View] [Download]
Abstract: Theoretical properties of an ideal power switch such as power losses and noise generation (EMI) are discussed. Each of these properties, their interdependence and trade off are described. The principle of compensation will be explained and correspondence between charge compensated MOSFET (Cool- MOS) and theoretical ideal power switch are discussed.

	Comparison of the swithing characteristics of high-voltage ECT.... By S. V. Rybin; A. M. Surma; E. A. Ladygin	[View] [Download]
Abstract: The ECT - Emitter Commutated Thyristor - is hard drive GTO, controlled by switching a low-voltage key in a cathode circuit. The experimental 6000V ECTs were made with application of two technologies of carrier lifetime control - irradiation by protons or electrons. The turn-on and turn-off characteristics of these devices are investigated.

	Edge Terminations For 6.5Kv Igbts By M. Vellvehi; D. Flores; S. Hidalgo; J. Rebollo; J. Millán; L. Coulbeck; P. Waind; D. Newcombe	[View] [Download]
Abstract: This paper is addressed to the design and optimisation of Junction Termination Extension and Floating Guard Rings edge termination structures to integrate 6.5 kV IGBT devices. The developed edge termination structures are extensively analysed through numerical simulations, and experimental data on fabricated diode structures are correlated with simulation results showing the feasibility of the proposed techniques.

	Optimized diode design for IGBT´s and GCT´s switching circuits. By M. Portesine; F. Fasce; P. Pampili; P. Cova; R. Menozzi; B. Cascone; L. Fratelli; G. Botto	[View] [Download]
Abstract: In a modern power converter, the high performance of semiconductor switches, like IGBT’s and GCT's, imposes hard turn-off to diodes, with fast current gradients resulting in undesirable and dangerous overvoltages. A new family of optimized diodes has been developed as well as a new test circuit able to evaluate the diode behavior under real operation conditions.