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Charge compensated MOSFET - How close to the ideal power switch?
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| Author(s) |
M. Puerschel; A. Riedlhammer; I. Zverev |
| Abstract |
Theoretical properties of an ideal power switch such as power losses and noise generation (EMI) are
discussed. Each of these properties, their interdependence and trade off are described. The principle of
compensation will be explained and correspondence between charge compensated MOSFET (Cool-
MOS) and theoretical ideal power switch are discussed. |
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| Filename: | EPE2001 - PP00054 - Zverev.pdf |
| Filesize: | 970.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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