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Achievement of a new peripheral planar structure ...
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| Author(s) |
O. Causse; P. Austin; J.L. Sanchez; G. Bonnet; E. Scheid |
| Abstract |
Two new peripheral planar structures of junction termination type allowing symmetrical
blocking voltage are presented. The first one is considered like an ideal structure, but requires a specific
packaging. The second one is well suited for classical packaging using brazing. Two technological
solutions to realise insulated P+ vertical walls implemented into these new peripheral structures are also
presented: the thermomigration of aluminium in silicon and deep trenches filled with highly boron doped
polysilicon. |
| Download |
| Filename: | EPE2001 - PP00648 - Causse.pdf |
| Filesize: | 793.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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