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A 4.5kV-HVIGBT Module Family with Low VCE(sat)
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| Author(s) |
H. Iwamoto; K. Mochizuki; K. Ishii; I. Merfert |
| Abstract |
A new family of 4.5kV IGBTs is presented. The relationship between n– layer thickness and blocking
voltage is analyzed with the intention of minimizing the collector-emitter saturation voltage VCE(sat).
The collector and buffer concentrations and the position of the lifetime control region have been
optimized aiming at a reduction of the hot leakage current. The result is an IGBT structure that has a
lower VCE(sat) than an equivalent 3.3kV IGBT. |
| Download |
| Filename: | EPE2001 - PP00667 - Merfert.pdf |
| Filesize: | 202.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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