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   Optimized diode design for IGBT´s and GCT´s switching circuits.   [View] 
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 Author(s)   M. Portesine; F. Fasce; P. Pampili; P. Cova; R. Menozzi; B. Cascone; L. Fratelli; G. Botto 
 Abstract   In a modern power converter, the high performance of semiconductor switches, like IGBT’s and GCT's, imposes hard turn-off to diodes, with fast current gradients resulting in undesirable and dangerous overvoltages. A new family of optimized diodes has been developed as well as a new test circuit able to evaluate the diode behavior under real operation conditions. 
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Filename:EPE2001 - PP00379 - Portesine.pdf
Filesize:103.2 KB
 Type   Members Only 
 Date   Last modified 2004-03-10 by System