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Optimized diode design for IGBT´s and GCT´s switching circuits.
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Author(s) |
M. Portesine; F. Fasce; P. Pampili; P. Cova; R. Menozzi; B. Cascone; L. Fratelli; G. Botto |
Abstract |
In a modern power converter, the high performance of semiconductor switches, like IGBT’s and
GCT's, imposes hard turn-off to diodes, with fast current gradients resulting in undesirable and
dangerous overvoltages. A new family of optimized diodes has been developed as well as a new test
circuit able to evaluate the diode behavior under real operation conditions. |
Download |
Filename: | EPE2001 - PP00379 - Portesine.pdf |
Filesize: | 103.2 KB |
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Type |
Members Only |
Date |
Last modified 2004-03-10 by System |
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